News Column

Semiconductor Components Industries Assigned Patent for Semiconductor Device

June 2, 2014



By Targeted News Service

ALEXANDRIA, Va., June 2 -- Semiconductor Components Industries, Phoenix, has been assigned a patent (8,735,997) developed by Toshihiro Hachiyanagi, Gunma, Japan, Masafumi Uehara, Gunma, Japan, and Katsuyoshi Anzai, Gunma, Japan, for a "semiconductor device having drain/source surrounded by impurity layer and manufacturing method thereof."

The patent application was filed on Sept. 17, 2007 (11/856,481). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=87,35,997.PN.&OS=PN/87,35,997&RS=PN/87,35,997

Written by Amal Ahmed; edited by Jaya Anand.

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Source: Targeted News Service


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