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TriQuint's Thomas Meier, VP of Engineering, to Highlight GaAs PA Performance Advantages at SEMICON West

June 27, 2014



ENP Newswire - 27 June 2014

Release date- 26062014 - TriQuint's VP of Custom Products Central Engineering for mobile devices, Thomas Meier, will be presenting a session at SEMICON West, which will be held in San Francisco, CA, on July 8-10.

His topic, 'GaAs & CMOS: Coexistence in a Wireless World,' is part of a two-hour focus session with thought leaders from several companies, discussing disruptive semiconductor technologies for a variety of applications, including mobile devices.

'Talk of silicon completely displacing GaAs in the RF front-end of cellular phones is premature and dead wrong,' says Thomas. 'While CMOS amplifiers are making inroads in the low-end 2G / 3G handset market, GaAs will retain its dominance in the mid-range and high-end 3G / 4G market, thanks to its superior performance and significantly smaller size.'

Thomas's presentation will be on Thursday, July 10, 2014, during the panel session from 10:30 a.m. to 12:40 p.m. For more information on the conference, including an abstract of Thomas's presentation, please visit the SEMICON West website.

Recent TriQuint articles:

Power Amplifiers: Will Silicon CMOS Slowly Weaken the Vice-Like Grip of GaAs (April 1, 2014, Compound Semiconductor)

Multimode Multiband PAs: Solving Front End Challenges Through Integration (February 28, 2014, RF Globalnet)

Fully-Loaded GaAs Front-End Modules: Proven Winners for LTE and 3G Smartphones (January 1, 2014; Microwave Product Digest)

GaAs Will Fend Off Silicon CMOS in Handset Front-Ends (June 21, 2013; Compound Semiconductor)


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Source: ENP Newswire


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