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Researchers from Shanghai Institute of Technical Physics Report Findings in Chemical Vapor Deposition (The effects of substrate nitridation on the...

July 4, 2014



Researchers from Shanghai Institute of Technical Physics Report Findings in Chemical Vapor Deposition (The effects of substrate nitridation on the growth of nonpolar alpha-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition)

By a News Reporter-Staff News Editor at Science Letter -- A new study on Chemical Vapor Deposition is now available. According to news reporting originating in Shanghai, People's Republic of China, by NewsRx journalists, research stated, "The effects of substrate nitridation on the growth of nonpolar a-plane GaN directly deposited on r-plane sapphire by metalorganic chemical vapor deposition (MOCVD) were investigated. Using nitridation, highquality a-plane GaN with flat surface was acquired."

The news reporters obtained a quote from the research from the Shanghai Institute of Technical Physics, "On the contrary, if the nitridation layer was removed, the epitaxial a-plane GaN exhibited deep triangular pits and poor crystalline properties. This could be attributed to the fact that uniform-distributed AIN grains were introduced by nitridation, which might act as the nucleation layer for the following a-plane GaN growth. The effects of substrate nitridation on the evolutions of anisotropic morphologies and crystalline properties were also studied by artificially interrupting the growth at different stages. The consequences suggested the nitridation layer could contribute to surface coalescence of a-plane GaN."

According to the news reporters, the research concluded: "The reasons responsible for this phenomenon were probed by Raman spectrum, and a model was proposed to explicate the effects of nitridation on the growth of a-plane GaN."

For more information on this research see: The effects of substrate nitridation on the growth of nonpolar alpha-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition. Applied Surface Science, 2014;307():525-532. Applied Surface Science can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier - www.elsevier.com; Applied Surface Science - www.elsevier.com/wps/product/cws_home/505669)

Our news correspondents report that additional information may be obtained by contacting J. Zhang, Chinese Academy Sci, Shanghai Inst Technical Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, People's Republic of China. Additional authors for this research include W. Tian, F. Wu, Q.X. Wan, Z.J. Wang, J. Zhang, Y.L. Li, J.N. Dai, Y.Y. Fang, Z.H. Wu, C.Q. Chen, J.T. Xu and X.Y. Li (see also Chemical Vapor Deposition).

Keywords for this news article include: Asia, Shanghai, Nanotechnology, Emerging Technologies, Chemical Vapor Deposition, People's Republic of China

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Science Letter


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