News Column

TriQuint’s High Performance GaN Solutions Take Center Stage at IEEE IMS / MTT

June 2, 2014

Visit TriQuint at Booth 1533 in Tampa, Florida, June 3-5, 2014

HILLSBORO, Ore. & TAMPA, Fla.--(BUSINESS WIRE)-- TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF solutions supplier and technology innovator, is showcasing its new, high performance technologies at the IEEE International Microwave Symposium / Microwave Theory and Techniques exhibition June 3-5, 2014 in Tampa, Florida.

“TriQuint is on track to deliver more than 75 new products to the infrastructure and defense markets in the first half of 2014, adding to our record of 130 products released in 2013,” said Vice President and General Manager James Klein, Infrastructure and Defense Products. “We’re proud of the innovation and execution that brings cutting edge technology to our customers’ systems.”

TriQuint will discuss the following significant product innovations at MTT:

  • TriQuint’s patented Spatium™ technology enables satellite communications for commercial and defense use of the Ka-band spectrum, opening up new satellite possibilities. It achieves unprecedented levels of Ka-Band solid state power, bandwidth and efficiency, ensuring that its high frequency broadband connectivity can be used for media-rich and high-bandwidth communications such as airborne wireless access; defense communications; and video for unmanned aerial vehicles or systems. Spatium combines multiple GaN or GaAs MMICs enabling cost effective and reliable solid state broadband power amplification.
  • GaN technology performance for defense, aerospace and foundry customers including high power and power-added efficiencies for L, S, C, X, Ku, Ka-band radars and electronic warfare applications and Ku and Ka-band satcom; a new family of transistors; new packaging; and highly robust amplifiers including TQGaN25, TQGaN25HV and TQGaN15 technologies. With the broadest GaN portfolio of processes and products for the defense & aerospace markets, TriQuint offers GaN power amplifiers from L through Ka-band, low-noise amplifiers from S to X-band and RF switches from DC to K-band.
  • Optical and cable infrastructure including dual and quad channel limiting and linear drivers and TIAs for next generation 100, 200 and 400 Gb/s optical systems;GaN and GaAs MMICs for CATV; and temperature-compensated notch filters enabling the coexistence of Wi-Fi and LTE.
  • Base station, WLAN and P2P including bypass LNAs with the lowest noise in the industry enabling high-sensitivity radios; the industry’s market leading WLAN power amplifiers enabling 802.11ac; TriQuint’s family of drivers and final stage BTS GaN power amplifiers; new 28 GHz and 32 GHz linear power amplifiers, and a 38/42 GHz upconverter for the P2P radio market; and small cell base station technology to increase future 4G network coverage.

    For part numbers and details on TriQuint’s recently released products, or to sign-up for email updates, visit TriQuint’s New Product Announcement (NPA) page.

    TriQuint leads GaN research and product development for both defense and civilian applications. TriQuint’s ongoing development of GaN-based devices is leading to smaller, more efficient power amplifiers, used for military radar and electronic warfare programs as well as commercial wireless communications and infrastructure.

    Learn more about recent innovations during the following presentations by TriQuint technologists at the show:

             
    New GaN and GaAs Solutions Overview       Grant Wilcox
    Broadband High-Efficiency GaN Power Amplifiers       Bumjin Kim, Mark Greene, Matt Osmsus
    Advances in Low Noise Technology       Jingshi Yao, Xiaopeng Sun, Bary Lin
    GaN-Based Power Supplies and Power Supply Modulators for Efficient Powering of RF PAs       David Fanning, Vipan Kumar, Charles Campbell, JL Jimenez
    Compact Ku-Band Transmit-Receive MMIC for Airborne Phased Array Applications       Donald Allen, Rajkumar Santhakumar
    Slant Field Plate Model for Field Effect Transistors       Robert Coffie
    Efficiency and Linearity Enhancement of Microwave GaN PAs using Harmonic Injection       Dr. Michael Dean Roberg


    Forward-Looking Statements:

    This press release contains forward-looking statements made pursuant to the Safe Harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include statements such as “solutions take center stage” or “on track to deliver”. These forward-looking statements are statements of management's opinion and are subject to various assumptions, risks, uncertainties and changes in circumstances. Actual results may vary materially from those expressed or implied in the statements herein or from historical results, due to changes in economic, business, competitive, technological and/or regulatory factors. More detailed information about risk factors that may affect actual results are set forth in TriQuint's reports on Form 10-K and 10-Q and other filings with the Securities and Exchange Commission. These reports can be accessed at the SEC web site, www.sec.gov. Except as required by law, TriQuint undertakes no obligation to revise or publicly release the results of any revision to these forward-looking statements. A reader of this release should understand that it is not possible to predict or identify all risk factors and should not consider the risk factors described in TriQuint's filings with the Securities and Exchange Commission to be a complete statement of all potential risks and uncertainties.

    FACTS ABOUT TRIQUINT

    Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global provider of innovative RF solutions and foundry services for the world’s top communications, defense and aerospace companies. People and organizations around the world need real-time, all-the-time connections; TriQuint products help reduce the cost and increase the performance of connected mobile devices and the networks that deliver critical voice, data and video communications. With the industry’s broadest technology portfolio, recognized R&D leadership, and expertise in high-volume manufacturing, TriQuint creates standard and custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has ISO9001-certified manufacturing facilities in the U.S., production in Costa Rica, and design centers in North America and Germany. For more information, visit www.triquint.com.

    TriQuint: Reach Further, Reach Faster™




    Media Contact:

    TriQuint Semiconductor, Inc.

    Brandi Frye, +1-503-615-9488

    Senior Director, Marketing Communications

    brandi.frye@triquint.com

    Source: TriQuint Semiconductor, Inc.


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