Using less power than traditional flash, V NAND boosts write endurance.
The new product makes use of 32 vertically stacked flash cell layers instead of 24 layers used in the first generation of V-NAND, which the Samsung launched in 2013.
The company said solid-state drives (SSDs) based on the new 3-D V-NAND will have nearly twice the endurance for writing data and will use 20% less energy compared to planar multi-level cell (MLC) SSDs.
Samsung launched its 3-D V-NAND technology for data center use in 2013.
The company said the customer base for its first-generation V-NAND SSDs included business IT customers and major data centers.
Most Popular Stories
- McDonald's Packages Coffee for National Distribution
- Apple Stock Bounces Back Big Time
- James Foley Beheading Video Is Real Thing: White House
- Target Slashes Annual Profit Outlook
- Castro-Blanco Joins Fifth Street Finance Board
- Google Kid Accounts Plan Raises Worries
- Honda's Safe Approach Pays Off in Sales
- Ballmer Steps Down From Microsoft Board
- GE Healthcare Bringing Jobs to Massachusetts
- Islamic Militant in James Foley Beheading Video May Be English