Using less power than traditional flash, V NAND boosts write endurance.
The new product makes use of 32 vertically stacked flash cell layers instead of 24 layers used in the first generation of V-NAND, which the Samsung launched in 2013.
The company said solid-state drives (SSDs) based on the new 3-D V-NAND will have nearly twice the endurance for writing data and will use 20% less energy compared to planar multi-level cell (MLC) SSDs.
Samsung launched its 3-D V-NAND technology for data center use in 2013.
The company said the customer base for its first-generation V-NAND SSDs included business IT customers and major data centers.
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