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Researchers Submit Patent Application, "Substrate Supporting Unit and Substrate Treating Apparatus and Method", for Approval

June 26, 2014



By a News Reporter-Staff News Editor at Politics & Government Week -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventor FUKASAWA, Takayuki (Seoul, KR), filed on July 1, 2013, was made available online on June 12, 2014.

No assignee for this patent application has been made.

News editors obtained the following quote from the background information supplied by the inventors: "The present invention is related to a substrate supporting unit and a substrate treating apparatus (or substrate processing apparatus) having the substrate supporting unit. The substrate supporting unit may support a substrate (e.g., a transistor substrate) when one or more treatment processes are performed on the substrate in the substrate treating apparatus.

"A substrate treating apparatus may be used in treating a substrate for manufacturing an electronic device, such as a flat-panel display device and/or a semiconductor device. In general, the substrate treating apparatus includes a process chamber and a substrate supporting unit disposed inside the process chamber to support the substrate. The substrate treating apparatus may perform a predetermined process on the substrate using a process gas supplied into the process chamber.

"To prevent the substrate from being overheated by an atmosphere inside the process chamber when the predetermined process is performed on the substrate, a cooling unit is disposed under the substrate supporting unit to cool the substrate. The substrate supporting unit, which is disposed between the substrate and the cooling unit, may transfer heat from the substrate to the cooling system, and the cooling system may dissipate the heat. In general, the substrate supporting unit may include different materials that transfer heat at substantially different rates. The substantially different heat transfer rates of the substrate supporting unit may cause different portions of the substrate to have substantially different temperatures during the process.

"The temperature differences of different portions of the substrate may exert negative influence on the quality of the process performed on the substrate. For example, the accuracy of an etch process or a deposition process may be unsatisfactory."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventor's summary information for this patent application: "One or more embodiments of the invention may be related to an apparatus for treating a substrate. The apparatus may include a process chamber. The process chamber may include a processing space and an opening portion for receiving the substrate into the processing space. The apparatus may further include a dielectric layer. The apparatus may further include a plurality of support elements disposed on the dielectric layer and configured to contact a bottom surface of the substrate for supporting the substrate. The plurality of support elements may include a first support element and a second support element immediately neighboring the first support element. A distance between the first support element and the second support element may be less than or equal to two times a thickness of the substrate. The configuration of the plurality of support elements may ensure that the temperature distribution on the upper surface, i.e., the processed surface, of the substrate is sufficiently uniform when the substrate is processed. Advantageously, the substrate process quality may be satisfactory.

"In one or more embodiments, the distance is greater than or equal to 0.01 mm.

"In one or more embodiments, the distance is a maximum distance between the first support element and the second support element in a direction parallel to a bottom surface of the dielectric layer.

"In one or more embodiments, the height of the opening portion is in a direction perpendicular to a bottom surface of the dielectric layer.

"In one or more embodiments, the apparatus may include a cooling member, wherein the dielectric layer is disposed between the cooling member and the plurality of support elements.

"In one or more embodiments, the first support element has a polygonal top surface configured to contact the bottom surface of the substrate.

"In one or more embodiments, the support elements are disposed in rows in a first direction and are disposed in a zigzag form with respect to a second direction that is perpendicular to the first direction.

"In one or more embodiments, the apparatus may include a first protrusion disposed on the dielectric layer and disposed between the first support element and the second support element, wherein the first protrusion is shorter than the first support element in a direction perpendicular to a bottom surface of the dielectric layer.

"In one or more embodiments, the apparatus may include a second protrusion disposed on the dielectric layer and disposed between the first support element and the second support element, wherein the second protrusion is shorter than the first support element in the direction perpendicular to a bottom surface of the dielectric layer.

"In one or more embodiments, the apparatus may include an electrostatic chuck, wherein the dielectric layer is disposed between the electrostatic chuck and the first protrusion.

"One or more embodiments of the invention may be related to a device for supporting a substrate inside a process chamber. The process chamber may include a processing space and an opening portion for receiving the substrate into the processing space. The device may include a dielectric layer. The device may further include a plurality of support elements disposed on the dielectric layer and configured to contact a bottom surface of the substrate for supporting the substrate. The plurality of support elements may include a first support element and a second support element immediately neighboring the first support element. In one or more embodiments, the device may include a protrusion disposed on the dielectric layer and disposed between the first support element and the second support element, wherein the protrusion is shorter than the first support element in a direction perpendicular to a bottom surface of the dielectric layer.

"In one or more embodiments, the device may include a protrusion disposed on the dielectric layer and disposed between the first support element and the second support element, wherein the protrusion is narrower than the first support element in a direction parallel to a bottom surface of the dielectric layer.

"One or more embodiments of the invention may be related to a method for treating a substrate. The method may include the following steps: disposing the substrate inside a process chamber; using a plurality of support elements to contact a bottom surface of the substrate for supporting the substrate, wherein the plurality of support elements includes a first support element and a second support element immediately neighboring the first support element, wherein a distance between the first support element and the second support element is less than or equal to two times a thickness of the substrate; processing the substrate inside the process chamber; and cooling the substrate using a cooling member, wherein a first heat is transferred from the substrate through the plurality of support members to the cooling member.

"In one or more embodiments, the distance is greater than or equal to 0.01 mm.

"In one or more embodiments, the method may include using an electrostatic chuck to secure the substrate on the plurality of support elements. A total contact area of the bottom surface of the substrate contacted by the plurality of support elements may have a first area size. An area of the dielectric layer contacted by the electrostatic chuck may have a second area size. A ratio of the first area size to the second area size may be less than or equal to 80%.

"In one or more embodiments, the ratio of the first area size to the second area size is greater than or equal to 0.1%.

"In one or more embodiments, the ratio of the first area size to the second area size is less than or equal to 50% and is greater than or equal to 0.1%.

"In one or more embodiments, the first support element and the second support element are disposed on a dielectric layer, a protrusion is disposed on the dielectric layer and disposed between the first support element and the second support element, the protrusion is shorter than the first support element in a direction perpendicular to a bottom surface of the dielectric layer, and a second heat is transferred from the substrate through a gas to the protrusion. In one or more embodiments, the second heat is transferred through the protrusion to the cooling element.

"One or more embodiments of the present invention may be related to a substrate supporting unit capable of maximizing uniformly of temperature of a substrate while processes are performed on the substrate.

"One or more embodiments of the present invention may be related to a substrate treating apparatus having the substrate supporting unit to optimally perform a process on the substrate.

"One or more embodiments of the invention may be related to a substrate supporting unit for use in a substrate treating apparatus. The substrate supporting unit may include a first dielectric layer configured to be disposed under the substrate and a plurality of protrusions that includes a dielectric material and is disposed on the first dielectric layer to contact and support the substrate. The protrusions are spaced from each other and a distance between two immediately adjacent protrusions among the protrusions is in a range of about 0.01 mm to about two times of a thickness of the substrate.

"One or more embodiments of the invention may be related to an apparatus for treating a substrate. The apparatus may include a process chamber that includes a reaction space in which the substrate is treated and the aforementioned substrate supporting unit disposed inside the process chamber to support the substrate.

"According to the above, the distance between the protrusions that support the substrate may be optimized. Accordingly, temperature differences between different areas of the substrate may be minimized. Advantageously, the quality (and/or results) of processes performed on the substrate, e.g., etching processes and/or deposition processes, may be satisfactory.

BRIEF DESCRIPTION OF THE DRAWINGS

"The above and other advantages of the present invention will become readily apparent by reference to the following detailed description when considered in conjunction with the accompanying drawings wherein:

"FIG. 1 is a schematic representation illustrating a substrate treating apparatus according to one or more embodiments of the present invention;

"FIG. 2 is an enlarged view illustrating a substrate supporting unit illustrated in FIG. 1;

"FIG. 3 is a plan view of a substrate supporting unit illustrating a first dielectric layer and a plurality of protrusions according to one or more embodiments of the present invention;

"FIGS. 4A to 4D are plan views of substrate supporting units illustrating protrusions according to one or more embodiments of the present invention;

"FIG. 5 is an enlarged view illustrating a substrate supporting unit according to one or more embodiments of the present invention;

"FIGS. 6A and 6B are views illustrating a method of manufacturing the first dielectric layer and the protrusions illustrated in FIG. 1 according to one or more embodiments of the present invention; and

"FIGS. 7A to 7C are views illustrating a method of manufacturing the first dielectric layer and the protrusions illustrated in FIG. 4B according to one or more embodiments of the present invention."

For additional information on this patent application, see: FUKASAWA, Takayuki. Substrate Supporting Unit and Substrate Treating Apparatus and Method. Filed July 1, 2013 and posted June 12, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=6140&p=123&f=G&l=50&d=PG01&S1=20140605.PD.&OS=PD/20140605&RS=PD/20140605

Keywords for this news article include: Patents.

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Source: Politics & Government Week


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