News Column

Researchers Submit Patent Application, "Semiconductor Devices Including Protruding Insulation Portions between Active Fins", for Approval

June 25, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventors Maeda, Shigenobu (Seongnam-si, KR); Kang, Hee-Soo (Seoul, KR); Sim, Sang-Pil (Seongnam-si, KR); Hong, Soo-Hun (Gunpo-si, KR), filed on September 9, 2013, was made available online on June 12, 2014.

No assignee for this patent application has been made.

News editors obtained the following quote from the background information supplied by the inventors: "Multi gate transistor structures have been provided including a fin-shaped or nanowire-shaped, multi-channel active pattern (or silicon body) on a substrate and a gate on a surface of the multi-channel active pattern.

"Since multi gate transistors may utilize a three-dimensional channel, scaling may be more easily achieved than in other approaches. In addition, the ability to control current may also be improved without necessarily increasing the length of the gate in the multi gate transistor. Further, short channel effects, in which the potential of the channel region being affected by the drain voltage, may be more effectively addressed."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "Embodiments according to the inventive concept can provide semiconductor devices including protruding insulation portions between active fans. Pursuant to these embodiments, a semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

BRIEF DESCRIPTION OF THE DRAWINGS

"The above and other features and advantages of the present inventive concept will become more apparent by describing in detail preferred embodiments thereof with reference to the attached drawings in which:

"FIGS. 1 and 2 are a layout view and a perspective view of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 3 is a partially perspective view illustrating a multi-channel active pattern and a field insulation layer in the semiconductor device according to some embodiments of the present inventive concept illustrated in FIGS. 1 and 2;

"FIG. 4 is a cross-sectional view taken along the line A-A of FIGS. 1 and 2;

"FIG. 5 is a cross-sectional view taken along the line B-B of FIGS. 1 and 2;

"FIG. 6 is a perspective view illustrating a region C of FIGS. 1 and 2;

"FIG. 7 is a cross-sectional illustration of the semiconductor device according to some embodiments embodiment of the present inventive concept compared to a conventional arrangement

"FIG. 8A is a cross-sectional view of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 8B is a cross-sectional view of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 8C is a cross-sectional view of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 8D is a cross-sectional view of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 9A is a perspective view of a semiconductor device according to some embodiments of the present inventive concept, and FIG. 9B is a cross-sectional view taken along the line B-B of FIG. 9A;

"FIG. 10A is a perspective view of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 10B is a partially perspective view illustrating multi-channel active patterns and a field insulation layer of the semiconductor device shown in FIG. 10A;

"FIG. 11 is a cross-sectional view of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 12 is a cross-sectional view of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 13 is a cross-sectional view of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 14A is a block diagram of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 14B is a block diagram of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 15A is a perspective view of a semiconductor device according to some embodiments of the present inventive concept;

"FIG. 15B is a cross-sectional view of a semiconductor device according to some embodiments of the present inventive concept;

"FIGS. 16 to 24 illustrate methods of forming the semiconductor device according to FIGS. 1-6;

"FIGS. 25A and 25B illustrate intermediate structures provided via methods of forming the semiconductor device according to FIG. 8A;

"FIG. 26 is a block diagram of an electronic system including a semiconductor device according to some embodiments of the present inventive concept; and

"FIGS. 27A and 27B illustrate exemplary semiconductor systems in which semiconductor devices according to some embodiments of the present inventive concept can be employed."

For additional information on this patent application, see: Maeda, Shigenobu; Kang, Hee-Soo; Sim, Sang-Pil; Hong, Soo-Hun. Semiconductor Devices Including Protruding Insulation Portions between Active Fins. Filed September 9, 2013 and posted June 12, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=5662&p=114&f=G&l=50&d=PG01&S1=20140605.PD.&OS=PD/20140605&RS=PD/20140605

Keywords for this news article include: Patents, Electronics, Semiconductor.

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


For more stories covering the world of technology, please see HispanicBusiness' Tech Channel



Source: Electronics Newsweekly


Story Tools






HispanicBusiness.com Facebook Linkedin Twitter RSS Feed Email Alerts & Newsletters