News Column

Report Summarizes Materials Engineering Study Findings from Vilnius University

June 25, 2014



By a News Reporter-Staff News Editor at Journal of Engineering -- Investigators publish new report on Materials Engineering. According to news originating from Vilnius, Lithuania, by VerticalNews editors, the research stated, "Non-equilibrium carrier dynamics was studied in a free-standing 160 mu m thick 3C-SiC wafer using time-resolved differential transmittivity (DT), differential reflectivity (DR), and light induced transient grating (LITG) techniques. To enable investigation of carrier recombination and diffusion features in the middle part of the wafer, a wedge-shaped strip was prepared by polishing out the most-defective part of the wafer on the substrate side."

Our news journalists obtained a quote from the research from Vilnius University, "Measurements of DT and DR decay kinetics on both sides of the wedged sample and their numerical fitting provided bulk lifetimes of 180 ns in the middle part and 60 ns in the edge part (similar to 50 mu m thick subsurface region). On the as-grown side, the surface recombination velocity was equal to 3 x 10(3) cm/s. Carrier diffusivity, determined by LITG technique, and recombination rate were found injection-dependent. The low-injection value of diffusion length, L-D = 8 mu m, was found the longest in the middle part of the wafer, while at high injections it decreased to 1 mu m due to an impact of Auger recombination with a coefficient, C = (4 +/- 1) x 10(-32) cm(6)/s."

According to the news editors, the research concluded: "The 2.7 times lower diffusion length value in the edge part was explained by an impact of point defects to the carrier lifetime and diffusivity."

For more information on this research see: Application of excite-probe techniques for determination of surface, bulk and nonlinear recombination rates in cubic SiC. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2014;185():37-44. Materials Science and Engineering B-Advanced Functional Solid-State Materials can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands.

The news correspondents report that additional information may be obtained from P. Scajev, Vilnius Univ, Inst Appl Res, LT-10222 Vilnius, Lithuania.

Keywords for this news article include: Europe, Vilnius, Lithuania, Materials Engineering

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Source: Journal of Engineering


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