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Patent Issued for Nonvolatile Memory Device, Read Method for Nonvolatile Memory Device, and Memory System Incorporating Nonvolatile Memory Device

June 25, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Alexandria, Virginia, VerticalNews journalists report that a patent by the inventors Kim, Chul Bum (Seoul, KR); Kim, Hyung Gon (Hwaseong-si, KR); Lee, Chul Ho (Suwon-si, KR); Chang, Hong Seok (Seoul, KR), filed on November 14, 2011, was published online on June 10, 2014.

The patent's assignee for patent number 8750055 is Samsung Electronics Co., Ltd. (Suwon-si, Gyeonggi-do, KR).

News editors obtained the following quote from the background information supplied by the inventors: "Embodiments of the inventive concept relate generally to semiconductor memory devices, and more particularly to nonvolatile memory devices, read methods for the nonvolatile memory devices, and memory systems incorporating the nonvolatile memory devices.

"Semiconductor memory devices can be roughly divided into two categories according to whether they retain stored data when disconnected from power. These categories include volatile memory devices, which lose stored data when disconnected from power, and nonvolatile memory devices, which retain stored data when disconnected from power. Examples of volatile memory devices include dynamic random access memory (DRAM) and static random access memory (SRAM). Examples of nonvolatile memory devices include read only memory (ROM), programmable read only memory (PROM), electrically programmable read only memory (EPROM), electrically erasable and programmable read only memory (EEPROM), flash memory, phase-change random access memory (PRAM), magnetic random access memory (MRAM), resistive random access memory (RRAM), and ferroelectric random access memory (FRAM).

"Flash memory device is an especially popular type of nonvolatile memory device due to attractive features such as relatively high storage capacity, low power consumption, and the ability to withstand physical shock. In view of this continuing popularity, researchers are constantly pursuing ways to improve flash memory devices. For example, researchers are continually pursuing ways to improve the speed and accuracy of read and write operations as well as storage capacity."

As a supplement to the background information on this patent, VerticalNews correspondents also obtained the inventors' summary information for this patent: "According to one embodiment of the inventive concept, a method of reading a nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

"According to another embodiment of the inventive concept, a nonvolatile memory device comprises a memory cell array, an address decoder that selects a word line of the memory cell array in response to a received addresses, a clock generator that generates a clock based on a read enable signal, a read and write circuit that reads data corresponding to the received addresses from the memory cell array and transfers the read data in response to the clock, and an input/output driver that outputs a strobe signal in response to the read enable signal and outputs the read data transferred from the read and write circuit. The read data is output after the strobe signal is toggled a predetermined number of times.

"According to still another embodiment of the inventive concept, a memory system comprises a nonvolatile memory device, and a controller configured to control the nonvolatile memory device. The nonvolatile memory device comprises a memory cell array, an address decoder that selects a word line of the memory cell array in response to received addresses, a clock generator that generates a clock based on a read enable signal, a read and write circuit that reads data corresponding to the received addresses from the memory cell array and transfers the read data in response to the clock, and an input/output driver that outputs a strobe signal in response to the read enable signal and outputs the read data transferred from the read and write circuit. The read data is output after the strobe signal is toggled a predetermined number of times.

"These and other embodiments of the inventive concept can improve the reliability of a nonvolatile memory device by outputting an input/output signal after a strobe signal is stabilized."

For additional information on this patent, see: Kim, Chul Bum; Kim, Hyung Gon; Lee, Chul Ho; Chang, Hong Seok. Nonvolatile Memory Device, Read Method for Nonvolatile Memory Device, and Memory System Incorporating Nonvolatile Memory Device. U.S. Patent Number 8750055, filed November 14, 2011, and published online on June 10, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8750055.PN.&OS=PN/8750055RS=PN/8750055

Keywords for this news article include: Semiconductor, Random Access Memory, Samsung Electronics Co. Ltd..

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Source: Electronics Newsweekly


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