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New Nanorods Study Findings Have Been Reported by Investigators at Hanyang University

June 27, 2014



By a News Reporter-Staff News Editor at Science Letter -- Current study results on Nanorods have been published. According to news reporting out of Ansan, South Korea, by NewsRx editors, research stated, "We demonstrate the selective area growth (SAG) of GaN nanorods (NRs) on patterned Ti/Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy. Nanoholes pattern on Si(1 1 1) substrate were fabricated by a colloidal lithography technique and then GaN NRs were grown by varying the growth parameters, namely growth temperature, N-2 plasma power and Ga flux."

Our news journalists obtained a quote from the research from Hanyang University, "Under similar experimental conditions, GaN NRs grown on patterned Ti/Si(1 1 1) substrate showed improved size homogeneity and optical properties compared to GaN NRs grown on non-patterned Si(1 1 1) substrate. Photoluminescence spectra of SAG GaN NRs exhibited emission peaks corresponding to neutral donor bound excitons (D degrees X), donor-acceptor pair (DAP) and yellow luminescence (YL) bands at 3.477 eV, 3.280 eV and 2.245 eV respectively. Unlike D degrees X, both DAP and YL bands showed strong dependence on growth conditions."

According to the news editors, the research concluded: "Results demonstrate that V-Ga-involved defects act as deep acceptors and are responsible for the observed defect emissions in GaN NRs."

For more information on this research see: Influence of growth parameters on the optical properties of selective area grown GaN nanorods by plasma-assisted molecular beam epitaxy. Journal of Luminescence, 2014;151():188-192. Journal of Luminescence can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier - www.elsevier.com; Journal of Luminescence - www.elsevier.com/wps/product/cws_home/505700)

Our news journalists report that additional information may be obtained by contacting S.T. Lee, Hanyang University, Sch Elect & Comp Engn, Ansan 425791, South Korea. Additional authors for this research include R.S. Kumar, S.K. Jeon, M.D. Kim, S.G. Kim and J.E. Oh (see also Nanorods).

Keywords for this news article include: Asia, Ansan, South Korea, Nanotechnology, Emerging Technologies

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Science Letter


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