Our news journalists obtained a quote from the research, "This work proposes a solution to improve the linearity of class-B amplifiers driven by radio frequency-modulated signals having large peak to average power ratios. An important aspect of this work concerns the characterization of the dynamic behavior of GaN devices for gate bias trajectory optimization. For that purpose, the experimental study reported here is based on the use of a time-domain envelope setup. A specific gate bias circuit has been designed and connected to a 10W - 2.5GHz GaN amplifier demo board from CREE. Compared to conventional class-B operation with a fixed gate bias, a 10-dB improvement in terms of third-order intermodulation is reached."
According to the news editors, the research concluded: "When applied to the amplification of 16-QAM signals the proposed technique demonstrates significant ACPR reduction of order of 6dB along with error vector magnitude (EVM) improvements of five points over 8dB output power back-off with a minor impact on power-added efficiency performances."
For more information on this research see: A 10-W S-band class-B GaN amplifier with a dynamic gate bias circuit for linearity enhancement.
The news correspondents report that additional information may be obtained from P. Medrel, TAS, F-31100
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