News Column

Findings on Microwave and Wireless Technologies Discussed by P. Medrel and Co-Researchers

June 24, 2014

By a News Reporter-Staff News Editor at Journal of Technology -- A new study on Microwave and Wireless Technologies is now available. According to news originating from Toulouse, France, by VerticalNews correspondents, research stated, "In the present paper, we present a dynamic gate biasing technique applied to a 10W, S-band GaN amplifier. The proposed methodology addresses class-B operation of power amplifiers that offers the potential for high efficiency but requires a careful attention to maintain good linearity performances at large output power back-off."

Our news journalists obtained a quote from the research, "This work proposes a solution to improve the linearity of class-B amplifiers driven by radio frequency-modulated signals having large peak to average power ratios. An important aspect of this work concerns the characterization of the dynamic behavior of GaN devices for gate bias trajectory optimization. For that purpose, the experimental study reported here is based on the use of a time-domain envelope setup. A specific gate bias circuit has been designed and connected to a 10W - 2.5GHz GaN amplifier demo board from CREE. Compared to conventional class-B operation with a fixed gate bias, a 10-dB improvement in terms of third-order intermodulation is reached."

According to the news editors, the research concluded: "When applied to the amplification of 16-QAM signals the proposed technique demonstrates significant ACPR reduction of order of 6dB along with error vector magnitude (EVM) improvements of five points over 8dB output power back-off with a minor impact on power-added efficiency performances."

For more information on this research see: A 10-W S-band class-B GaN amplifier with a dynamic gate bias circuit for linearity enhancement. International Journal of Microwave and Wireless Technologies, 2014;6(1):3-11. International Journal of Microwave and Wireless Technologies can be contacted at: Cambridge Univ Press, Edinburgh Bldg, Shaftesbury Rd, CB2 8RU Cambridge, England. (Cambridge University Press -; International Journal of Microwave and Wireless Technologies -

The news correspondents report that additional information may be obtained from P. Medrel, TAS, F-31100 Toulouse, France. Additional authors for this research include A. Martin, T. Reveyrand, G. Neveux, D. Barataud, P. Bouysse, J.M. Nebus, L. Lapierre and J.F. Villemazet.

Keywords for this news article include: France, Europe, Toulouse, Microwave and Wireless Technologies

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Source: Journal of Technology

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