By a News Reporter-Staff News Editor at Journal of Technology -- Fresh data on Materials Science are presented in a new report. According to news originating from Pohang, South Korea, by VerticalNews correspondents, research stated, "Chemical vapor deposition-grown graphene has been an attractive electrode material for organic electronic devices, such as organic field-effect transistors (OFETs), because it is highly conductive and provides good oxidation and thermal stability properties. However, it still remains a challenge to demonstrate organic complementary circuits using graphene electrodes because of the relatively poor performance of n-type OFETs."
Our news journalists obtained a quote from the research from the Pohang University of Science and Technology, "Here, we report the development of high-performance organic complementary inverters using graphene as source/drain electrodes and N, N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) and pentacene as n- and p-type organic semiconductors, respectively. Graphene electrodes were n-doped via the formation of NH2-terminated self-assembled monolayers that lowered the work function and the electron injection barrier between the graphene and PTCDI-C13. Thermal annealing improved the molecular packing among PTCDI-C13 groups on the graphene surface, thereby increasing the crystallinity and grain size. The thermally annealed PTCDI-C13 OFETs prepared using n-doped graphene electrodes exhibited a good field-effect mobility of up to 0.43 cm(2)/(V s), which was comparable to the values obtained from other p-type pentacene OFETs."
According to the news editors, the research concluded: "By integrating p- and n-type OFETs, we successfully fabricated organic complementary inverters that exhibited highly symmetric operation with an excellent voltage gain of up to 124 and good noise margin."
For more information on this research see: High-Performance Organic Complementary Inverters Using Monolayer Graphene Electrodes. ACS Applied Materials & Interfaces, 2014;6(9):6816-6824. ACS Applied Materials & Interfaces can be contacted at: Amer Chemical Soc, 1155 16TH St, NW, Washington, DC 20036, USA. (American Chemical Society - www.acs.org; ACS Applied Materials & Interfaces - www.pubs.acs.org/journal/aamick)
The news correspondents report that additional information may be obtained from Y.J. Jeong, Pohang University of Science & Technology, Dept. of Chem Engn, Polymer Res Inst, Pohang 790784, South Korea. Additional authors for this research include J. Jang, S. Nam, K. Kim, L.H. Kim, S. Park, T.K. An and C.E. Park.
Keywords for this news article include: Asia, Pohang, South Korea, Materials Science
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