News Column

Data from N.T. Matabosch and Colleagues Advance Knowledge in Microwave and Wireless Technologies

June 24, 2014

By a News Reporter-Staff News Editor at Journal of Technology -- Research findings on Microwave and Wireless Technologies are discussed in a new report. According to news originating from Toulouse, France, by VerticalNews correspondents, research stated, "An accurate and very large band (30-110 GHZ) lumped element equivalent circuit model of capacitive RF-MEMS components based on a standard 250nm BiCMOS technology is presented."

Our news journalists obtained a quote from the research, "This model is able to predict the effect of the fabrication process dispersion, synthesize new components and monitor the failure mechanisms. Moreover, a reliability study is performed in order to define a screening criterion (V-POUT >36V and |V-PIN-V-POUT|1) based on which a selection of the devices with optimal performance in terms of RF and lifetime performance can be made."

According to the news editors, the research concluded: "Finally, a very quick effective technique (non-intrusive) is proposed to carry out this operation."

For more information on this research see: Equivalent circuit model of reliable RF-MEMS switches for component synthesis, fabrication process characterization and failure analysis. International Journal of Microwave and Wireless Technologies, 2014;6(1):73-81. International Journal of Microwave and Wireless Technologies can be contacted at: Cambridge Univ Press, Edinburgh Bldg, Shaftesbury Rd, CB2 8RU Cambridge, England. (Cambridge University Press -; International Journal of Microwave and Wireless Technologies -

The news correspondents report that additional information may be obtained from N.T. Matabosch, Thales Alenia Space, F-31037 Toulouse, France. Additional authors for this research include F. Coccetti, M. Kaynak, B. Espana, B. Tillack and J.L. Cazaux.

Keywords for this news article include: France, Europe, Toulouse, Microwave and Wireless Technologies

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Source: Journal of Technology

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