News Column

Micron Technology Assigned Patent for Semiconductor Memory Device Floating Gate

June 13, 2014

By Targeted News Service

ALEXANDRIA, Va., June 13 -- Micron Technology, Boise, Idaho, has been assigned a patent (8,722,490) developed by two co-inventors for a method "of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling and device thus obtained." The co-inventors are Daniela Brazzelli, Busto Arsizio, Italy, and Giorgio Servalli, Ciserano, Italy.

The patent application was filed on Aug. 26, 2011 (13/219,491). The full-text of the patent can be found at

Written by Lesley Gonzales; edited by Vessie Ann Abalos.


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Source: Targeted News Service

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