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Micron Technology Assigned Patent for Semiconductor Memory Device Floating Gate

June 13, 2014



By Targeted News Service

ALEXANDRIA, Va., June 13 -- Micron Technology, Boise, Idaho, has been assigned a patent (8,722,490) developed by two co-inventors for a method "of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling and device thus obtained." The co-inventors are Daniela Brazzelli, Busto Arsizio, Italy, and Giorgio Servalli, Ciserano, Italy.

The patent application was filed on Aug. 26, 2011 (13/219,491). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8722490.PN.&OS=PN/8722490&RS=PN/8722490

Written by Lesley Gonzales; edited by Vessie Ann Abalos.

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Source: Targeted News Service


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