At PCIM Asia conference in
In this presentation, EPC will demonstrate the ability of eGaN FETs to be employed in a class-E wireless energy transfer system that shows a 20 percentage point improvement in peak efficiency over a voltage-mode class-D version using the same coils and device load. The designs operate with loosely coupled coils in the 6.78 MHz ISM band.
The experimental example demonstrates why the superior characteristics of the eGaN FETs, such as low input and output capacitance, low package inductances, and small size, make them an ideal choice for wireless power systems. The experimental unit was designed to deliver up to 30 W and the EPC2012 eGaN FET allows the class-E system to operate at optimum conversion efficiency. EPC will also demonstrate an even more efficient new topology that is able to operate with improved stability and reduced component counts compared with the Class E example.
“Wireless energy transfer will be one of the largest and fastest growing markets for power components over the next ten years. We believe eGaN FETs offer the lowest cost, most stable and highest efficiency solution available today,” said
Technical Presentation Featuring GaN FETs by EPC Expert:
Tuesday, June 17th at |
|Session:||Oral Session – Wide Bandgap Power Semiconductor|
Attendees interested in meeting with EPC applications experts during the event can send a request to firstname.lastname@example.org.
About PCIM Asia
From latest developments of power semiconductors, passive components, products for thermal management, new materials, sensors as well as servo-technology and the wide area of power quality and energy-management - PCIM (Power Conversion Intelligent Motion)
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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