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Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology for Benchmark Efficiency Wireless Energy Converters at 2014 PCIM Asia Conference

June 13, 2014

At PCIM Asia conference in Shanghai, China, an EPC applications expert will demonstrate the superiority of GaN transistors compared to silicon power MOSFETs in wireless energy transfer applications.

EL SEGUNDO, Calif.--(BUSINESS WIRE)-- Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting an application-focused presentation at PCIM Asia highlighting the efficiency advantage of using eGaN FETs in wireless power transfer. The conference will be held in Shanghai, China from June 17th through the 19th.

In this presentation, EPC will demonstrate the ability of eGaN FETs to be employed in a class-E wireless energy transfer system that shows a 20 percentage point improvement in peak efficiency over a voltage-mode class-D version using the same coils and device load. The designs operate with loosely coupled coils in the 6.78 MHz ISM band.

The experimental example demonstrates why the superior characteristics of the eGaN FETs, such as low input and output capacitance, low package inductances, and small size, make them an ideal choice for wireless power systems. The experimental unit was designed to deliver up to 30 W and the EPC2012 eGaN FET allows the class-E system to operate at optimum conversion efficiency. EPC will also demonstrate an even more efficient new topology that is able to operate with improved stability and reduced component counts compared with the Class E example.

“Wireless energy transfer will be one of the largest and fastest growing markets for power components over the next ten years. We believe eGaN FETs offer the lowest cost, most stable and highest efficiency solution available today,” said Alex Lidow, EPC’s co-founder and CEO.

Technical Presentation Featuring GaN FETs by EPC Expert:

  • "Performance Evaluation of eGaN® FETs in Low Power High Frequency Class E Wireless Energy Converter"
              Date/Time:       Tuesday, June 17th at 10.35 a.m.11.00 a.m.
    Venue: Shanghai World Expo Exhibition and Convention Center
    Session: Oral Session – Wide Bandgap Power Semiconductor
    Presenter: Michael de Rooij, Executive Director, Application Engineering

    Attendees interested in meeting with EPC applications experts during the event can send a request to

    About PCIM Asia

    From latest developments of power semiconductors, passive components, products for thermal management, new materials, sensors as well as servo-technology and the wide area of power quality and energy-management - PCIM (Power Conversion Intelligent Motion) Asia offers a comprehensive, focused and compact presentation of products all under one roof. The event in China is an international meeting ground for specialists in power electronics and its applications in driver technologies and power quality. Visit PCIM Asia on

    About EPC

    EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

    Visit our web site:

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    eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

    Efficient Power Conversion

    Joe Engle, 310-986-0350

    Source: Efficient Power Conversion Corporation

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    Source: Business Wire

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