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Patent Issued for Semiconductor Devices Having Vertical Channel Transistors and Methods for Fabricating the Same

June 18, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventors Kim, Dae-Ik (Hwaseong-si, KR); Hong, Hyeong-Sun (Seongnam-si, KR); Hwang, Yoo-Sang (Suwon-Si, KR); Chung, Hyun-Woo (Seoul, KR), filed on October 31, 2011, was published online on June 3, 2014, according to news reporting originating from Alexandria, Virginia, by VerticalNews correspondents.

Patent number 8742493 is assigned to Samsung Electronics Co., Ltd. (Suwon-si, Gyeonggi-do, KR).

The following quote was obtained by the news editors from the background information supplied by the inventors: "The inventive concept relates to semiconductor devices. More particularly, the inventive concept relates to a semiconductor device having a vertical channel transistor and to a method of fabricating the same.

"Transistors, bit lines, and the like, of semiconductor devices, are formed using various manufacturing techniques. According to one of these techniques, the channel of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is formed so as to be horizontal, i.e., substantially parallel to the plane of the substrate used in the forming of the transistor. However, it is becoming more and more difficult to use these techniques to fabricate transistors, bit lines and the like which meet the smaller design rules demanded of today's semiconductor devices. Therefore, manufacturing techniques are constantly being developed with the aim of improving the degree of integration, operating speed, and yield of semiconductor devices. A design that has been proposed for offering an improvement over typical transistors having horizontal channel channels, in terms of their ability to be densely integrated, their resistance, and current driving ability, etc., is that of a transistor having a vertical channel"

In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventors' summary information for this patent: "According to one aspect of the inventive concept, there is provided a method of fabricating a semiconductor device, which includes forming a plurality of vertical channels extending upright on a base of the device, forming a plurality of bit lines, extending longitudinally in a first direction, among the vertical channels, forming a plurality of word lines having vertical gates extending upright alongside first sides of the vertical channels, respectively, and each having a linear section extending longitudinally in a second direction crossing the first direction, and forming a conductor comprising a plurality of conductive elements disposed adjacent second sides of the vertical channels, respectively, and a conductive line connecting the plurality of conductive elements, wherein the first and second sides each vertical channel are opposite sides of the vertical channel.

"According to another aspect of the inventive concept, there is provided a semiconductor device, comprising a plurality of active pillars disposed upright on a base so as to each have first and second opposite sides, a plurality of gates facing the first sides of the vertical channels of the active pillars, respectively, conductive lines extending from the gates, respectively, in a first direction such that each of the gates and the conductive line extending therefrom constitute a word line, a plurality of bit lines extending in a second direction crossing the first direction, and a conductor comprising a plurality of conductive elements facing the second sides of the active pillars, respectively, and an extension line connecting the conductive elements, wherein each of the active pillars is interposed between one of the conductive elements and one of the gates, each of the active pillars has an upper junction at an upper part thereof, a lower junction at a lower part thereof, and a vertical channel located between the upper and lower junctions wherein each of the gates, and the vertical channel and the junctions of the active pillar faced by the gate constitute a field effect transistor.

"According to another aspect of the inventive concept, there is provided a semiconductor device comprising: a substrate comprising a base, and an active pillar extending upright on the base, a gate disposed adjacent a first side of the active pillar, and a conductive element facing a second side of the active pillar opposite the first side, wherein the active pillar has first and second opposite sides, upper and lower regions of the active pillar of one conductivity type, and an intermediate region of the other conductivity type constituting a vertical channel, and the vertical channel is interposed between the conductive element and the gate."

URL and more information on this patent, see: Kim, Dae-Ik; Hong, Hyeong-Sun; Hwang, Yoo-Sang; Chung, Hyun-Woo. Semiconductor Devices Having Vertical Channel Transistors and Methods for Fabricating the Same. U.S. Patent Number 8742493, filed October 31, 2011, and published online on June 3, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8742493.PN.&OS=PN/8742493RS=PN/8742493

Keywords for this news article include: Semiconductor, Samsung Electronics Co. Ltd..

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Source: Electronics Newsweekly


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