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Patent Issued for Semiconductor Device and Method of Forming Conductive Pillars Having Recesses Or Protrusions to Detect Interconnect Continuity...

June 18, 2014



Patent Issued for Semiconductor Device and Method of Forming Conductive Pillars Having Recesses Or Protrusions to Detect Interconnect Continuity between Semiconductor Die and Substrate

By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Alexandria, Virginia, VerticalNews journalists report that a patent by the inventors Chen, Jen Yu (Hsinchu, TW); Fu, Ting Yu (Hsinchu County, TW); Li, Men Hsien (Taichung, TW); Lee, Chien Chen (Hsinchu County, TW), filed on December 13, 2011, was published online on June 3, 2014.

The patent's assignee for patent number 8741764 is STATS ChipPAC, Ltd. (Singapore, SG).

News editors obtained the following quote from the background information supplied by the inventors: "Semiconductor devices are commonly found in modern electronic products. Semiconductor devices vary in the number and density of electrical components. Discrete semiconductor devices generally contain one type of electrical component, e.g., light emitting diode (LED), small signal transistor, resistor, capacitor, inductor, and power metal oxide semiconductor field effect transistor (MOSFET). Integrated semiconductor devices typically contain hundreds to millions of electrical components. Examples of integrated semiconductor devices include microcontrollers, microprocessors, charged-coupled devices (CCDs), solar cells, and digital micro-mirror devices (DMDs).

"Semiconductor devices perform a wide range of functions such as signal processing, high-speed calculations, transmitting and receiving electromagnetic signals, controlling electronic devices, transforming sunlight to electricity, and creating visual projections for television displays. Semiconductor devices are found in the fields of entertainment, communications, power conversion, networks, computers, and consumer products. Semiconductor devices are also found in military applications, aviation, automotive, industrial controllers, and office equipment.

"Semiconductor devices exploit the electrical properties of semiconductor materials. The atomic structure of semiconductor material allows its electrical conductivity to be manipulated by the application of an electric field or base current or through the process of doping. Doping introduces impurities into the semiconductor material to manipulate and control the conductivity of the semiconductor device.

"A semiconductor device contains active and passive electrical structures. Active structures, including bipolar and field effect transistors, control the flow of electrical current. By varying levels of doping and application of an electric field or base current, the transistor either promotes or restricts the flow of electrical current. Passive structures, including resistors, capacitors, and inductors, create a relationship between voltage and current necessary to perform a variety of electrical functions. The passive and active structures are electrically connected to form circuits, which enable the semiconductor device to perform high-speed calculations and other useful functions.

"Semiconductor devices are generally manufactured using two complex manufacturing processes, i.e., front-end manufacturing, and back-end manufacturing, each involving potentially hundreds of steps. Front-end manufacturing involves the formation of a plurality of die on the surface of a semiconductor wafer. Each semiconductor die is typically identical and contains circuits formed by electrically connecting active and passive components. Back-end manufacturing involves singulating individual semiconductor die from the finished wafer and packaging the die to provide structural support and environmental isolation. The term 'semiconductor die' as used herein refers to both the singular and plural form of the words, and accordingly, can refer to both a single semiconductor device and multiple semiconductor devices.

"One goal of semiconductor manufacturing is to produce smaller semiconductor devices. Smaller devices typically consume less power, have higher performance, and can be produced more efficiently. In addition, smaller semiconductor devices have a smaller footprint, which is desirable for smaller end products. A smaller semiconductor die size can be achieved by improvements in the front-end process resulting in semiconductor die with smaller, higher density active and passive components. Back-end processes may result in semiconductor device packages with a smaller footprint by improvements in electrical interconnection and packaging materials.

"A conventional semiconductor die has a plurality of conductive pillars formed on the active surface of the die. A substrate has a plurality of contact pads and conductive traces formed on a surface of the substrate. The semiconductor die is mounted to the substrate and the conductive pillars are electrically and metallurgically connected to the contact pads or conductive traces. In some cases, less than all of the conductive pillars on the semiconductor die make good electrical contact to the contact pads or conductive traces on the substrate. An electrical interconnect failure between the conductive pillars on the semiconductor die and contact pads or conductive traces on the substrate should be detected during manufacturing.

"X-ray imaging techniques are commonly used to examine the integrity of connections between the semiconductor die and substrate. X-ray imaging techniques have proven ineffective for the inspection of joints formed using conductive pillars and bump material in part because it is difficult to confirm the degree of interconnection of the joint formed between the conductive pillar and contact pad or conductive trace on the substrate."

As a supplement to the background information on this patent, VerticalNews correspondents also obtained the inventors' summary information for this patent: "A need exists to detect continuity of an electrical interconnect between the conductive pillars on the semiconductor die and contact pads or conductive traces on the substrate. Accordingly, in one embodiment, the present invention is a method of making a semiconductor device comprising the steps of providing a semiconductor die, forming a plurality of conductive pillars with recesses over a surface of the semiconductor die, providing a substrate having a conductive layer formed over a surface of the substrate, depositing bump material over the conductive layer, melting the bump material over the conductive layer, pressing the semiconductor die toward the substrate to enable the melted bump material to flow into the recesses if the conductive pillars make connection to the conductive layer, and detecting electrical continuity between the conductive pillars and conductive layer by a presence of the bump material in the recesses.

"In another embodiment, the present invention is a method of making a semiconductor device comprising the steps of providing a semiconductor die, forming a conductive pillar with a recess or protrusion over a surface of the semiconductor die, providing a substrate having bump material deposited over a conductive layer formed over a surface of the substrate, melting the bump material, pressing the semiconductor die toward the substrate to enable the melted bump material to flow into the recess or over the protrusion if the conductive pillar makes connection to the conductive layer, and detecting a presence or absence of the bump material in the recess or protrusion of the conductive pillar.

"In another embodiment, the present invention is a method of making a semiconductor device comprising the steps of providing a semiconductor die, forming a conductive pillar with a recess or protrusion over a surface of the semiconductor die for detecting electrical connection.

"In another embodiment, the present invention is a semiconductor device comprising a semiconductor die and conductive pillar with a recess or protrusion formed over a surface of the semiconductor die for detecting electrical connection."

For additional information on this patent, see: Chen, Jen Yu; Fu, Ting Yu; Li, Men Hsien; Lee, Chien Chen. Semiconductor Device and Method of Forming Conductive Pillars Having Recesses Or Protrusions to Detect Interconnect Continuity between Semiconductor Die and Substrate. U.S. Patent Number 8741764, filed December 13, 2011, and published online on June 3, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8741764.PN.&OS=PN/8741764RS=PN/8741764

Keywords for this news article include: Electronics, Semiconductor, STATS ChipPAC Ltd..

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Source: Electronics Newsweekly


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