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Patent Issued for Protecting Element Having First and Second High Concentration Impurity Regions Separated by Insulating Region

June 18, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventors Asano, Tetsuro (Ora-gun, JP); Sakakibara, Mikito (Saitama, JP); Hirai, Toshikazu (Gunma, JP), filed on May 18, 2012, was published online on June 3, 2014, according to news reporting originating from Alexandria, Virginia, by VerticalNews correspondents.

Patent number 8742506 is assigned to Semiconductor Components Industries, LLC (Phoenix, AZ).

The following quote was obtained by the news editors from the background information supplied by the inventors: "This invention relates to a protecting element and especially relates to a protecting element that significantly improves the electrostatic breakdown voltage without degrading the high-frequency characteristics of a protected element.

"FIG. 11 show equivalent circuit diagrams of semiconductor devices with junctions or capacitors.

"FIG. 11A is an equivalent circuit diagram of a GaAs MESFET, FIG. 11B is that of a bipolar transistor, and FIG. 11C is that of a MOSFET.

"As shown by these diagrams, in considering the electrostatic breakdown voltage, any semiconductor device may be expressed as an equivalent circuit composed of diodes, capacitors, and resistors (inductors may be included in the case of a high-frequency device).

"Also, a diode may express a PN junction or a Schottky junction. For example, the diodes of a GaAs MESFET are Schottky barrier diodes and the diodes of a bipolar transistor are PN junction diodes.

"Generally with related-art semiconductor devices, the method of connecting an electrostatic breakdown protecting diode in parallel to a device containing a PN junction, Schottky junction, or capacitor that is easily damaged by electrostatic discharge may be considered for protection of the device from static electricity."

In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventors' summary information for this patent: "As mentioned above, generally for protection of a device from static electricity, the method of connecting an electrostatic breakdown protecting diode in parallel to the device containing a PN junction, Schottky junction, or capacitor that is easily damaged by electrostatic discharge may be considered. However, this method cannot be applied to a microwave device since increased parasitic capacitance due to connection of a protecting diode causes degradation of the high-frequency characteristics.

"Thus unlike other devices for audio, video, and power supply applications, microwave communication devices are low in the internal Schottky junction capacitance, PN junction capacitance, or gate MOS capacitance and had a problem of these junctions being weak against static electricity. Capacitors integrated in microwave integrated circuits are also low in capacitance value and weak against electrostatic discharge.

"This invention has been made in view of the various circumstances described above and provides a solution first by providing an arrangement having a first high concentration impurity region, a second high concentration impurity region, and an insulating region disposed in contact with and between the first and second high concentration impurity regions and arranging the first and second high concentration impurity regions as two terminals connected in parallel between two terminals of a protected element having a PN junction or Schottky junction so as to make electrostatic energy applied between the abovementioned two terminals of the protected element be discharged between the first and second high concentration impurity regions and thereby attenuate the electrostatic energy.

"This invention provides a solution secondly by providing an arrangement having a first high concentration impurity region, a second high concentration impurity region, and an insulating region disposed in contact with and between the first and second high concentration impurity regions and arranging the first and second high concentration impurity regions as two terminals connected in parallel between two terminals of a protected element forming a capacitor so as to make electrostatic energy applied between the two terminals of the protected element be discharged between the first and second high concentration impurity regions and thereby attenuate the electrostatic energy."

URL and more information on this patent, see: Asano, Tetsuro; Sakakibara, Mikito; Hirai, Toshikazu. Protecting Element Having First and Second High Concentration Impurity Regions Separated by Insulating Region. U.S. Patent Number 8742506, filed May 18, 2012, and published online on June 3, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8742506.PN.&OS=PN/8742506RS=PN/8742506

Keywords for this news article include: Electronics, Semiconductor Components Industries LLC.

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Source: Electronics Newsweekly


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