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Findings from Semnan University Provide New Insights into Low Dimensional Structures

May 13, 2014

By a News Reporter-Staff News Editor at Physics Week -- Research findings on Low Dimensional Structures are discussed in a new report. According to news reporting originating in Semnan, Iran, by VerticalNews journalists, research stated, "In this paper, we present the unique features exhibited by a novel double-recessed 4H-SIC Metal-Semiconductor Field Effect Transistor (MESFET) in which the channel consists of a floating metal region (FMR-MESFET). The key idea in this work is to scatter the electric field lines and modify the ionization mechanism."

The news reporters obtained a quote from the research from Semnan University, "The floating metal region allows more electrons participate in carrying current, so the optimized results show that the breakdown voltage (V-BR) and the drain saturation current (I-Dsat) increase about 54% and 22% compared with a conventional double recessed MESFET (CDR-MESFET), respectively. Therefore the maximum output power density (P-max) improved by factor 3.38 in comparisons with conventional one. Also, the cut-off frequency (f(T)) of 15 GHz and the maximum oscillation frequency (f(Max)) of 135 GHz for 4H-SiC FMR-MESFET is obtained compared to 13 GHz and 120 GHz for that of the CDR-MESFET and the minimum figure noise (F-min) decreased as a result of reducing gate-drain and gate-source capacitances by about 42% and 40%, respectively."

According to the news reporters, the research concluded: "Therefore, the FMR-MESFET has superior RF frequency and high electrical performances."

For more information on this research see: A novel double-recessed 4H-SiC MESFET using scattering the electric field for high power and RF applications. Physica E-Low-Dimensional Systems & Nanostructures, 2014;59():202-209. Physica E-Low-Dimensional Systems & Nanostructures can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands.

Our news correspondents report that additional information may be obtained by contacting Z. Ramezani, Semnan Univ, Dept. of Elect Engn, Semnan, Iran. Additional authors for this research include A.A. Orouji and P. Keshavarzi.

Keywords for this news article include: Iran, Asia, Semnan, Low Dimensional Structures

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Source: Physics Week

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