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Findings from Hynix Semiconductor Yields New Findings on Applied Physics

May 13, 2014



By a News Reporter-Staff News Editor at Physics Week -- Current study results on Applied Physics have been published. According to news reporting from Gyunggi Do, South Korea, by VerticalNews journalists, research stated, "Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt-Si) substrate at temperatures below 500 degrees C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior."

The news correspondents obtained a quote from the research from Hynix Semiconductor, "Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments."

According to the news reporters, the research concluded: "On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission."

For more information on this research see: Unipolar resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO2/Si substrate. Current Applied Physics, 2014;14(4):538-542. Current Applied Physics can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier - www.elsevier.com; Current Applied Physics - www.elsevier.com/wps/product/cws_home/621284)

Our news journalists report that additional information may be obtained by contacting T.G. Seong, Hynix Semicond Inc, Div Res & Dev, Inchon 467701, Gyunggi Do, South Korea. Additional authors for this research include B.S. Lee, K.B. Choi, S.H. Kweon, B.Y. Kim, K. Jung, J.W. Moon, K.J. Lee, K. Hong and S. Nahm.

Keywords for this news article include: Asia, Gyunggi Do, South Korea, Applied Physics

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Source: Physics Week