At PCIM Europe conference, EPC’s CEO and applications experts will
demonstrate the superiority of GaN transistors compared to silicon power
MOSFETs in a wide variety of applications.
Participants attending EPC sessions will learn about the enabling capability of eGaN FETs in 10 MHz buck converters for envelope tracking, how a novel new topology featuring eGaN FETs increases efficiency in wireless power transfer by 20%, and how an optimized parallel layout of eGaN power transistors achieves efficiencies above 96.5% in a 480 W converter.
During the conference EPC’s CEO,
“We are honored that the technical review committee of PCIM Europe has selected EPC experts to give technical papers focusing on GaN technology. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers around the world,” said
Technical Presentations Featuring GaN FETs by EPC Experts:
Attendees interested in meeting with EPC applications experts during the event can send a request to email@example.com.
PCIM (Power Conversion Intelligent Motion) is
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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Efficient Power Conversion