News Column

Patent Issued for Wafer Recycling Method

May 14, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Alexandria, Virginia, VerticalNews journalists report that a patent by the inventors Kim, Kyung Jun (Gwangju, KR); Son, Hyo Kun (Gwangju, KR), filed on June 23, 2008, was published online on April 29, 2014.

The patent's assignee for patent number 8709954 is LG Innotek Co., Ltd. (Seoul, KR).

News editors obtained the following quote from the background information supplied by the inventors: "The present disclosure relates to a wafer recycling method.

"Semiconductor devices are manufactured by forming a plurality of semiconductor layers on wafers.

"For example, a light emitting diode may be formed by depositing a first conductive nitride semiconductor layer, an active layer, a second conductive nitride semiconductor layer. A gallium nitride (GaN) layer may be used as the nitride semiconductor layer.

"Meanwhile, after the semiconductor layers are formed on the wafer, the semiconductor device may malfunction due to a variety of reasons such as a process error, a malfunctioning of equipments, and the like. In this case, the wafer may fall into disuse or be recycled by removing the semiconductor layers.

"Further, even when the semiconductor device normally operates, there is a need to recycle the wafer by removing the semiconductor layers due to other reasons."

As a supplement to the background information on this patent, VerticalNews correspondents also obtained the inventors' summary information for this patent: "Embodiments provide a wafer recycling method.

"Embodiments provide a wafer recycling method that can effectively remove a semiconductor layer deposited on the wafer.

"In an embodiment, a wafer recycling method comprises varying a temperature and pressure conditions to remove a first semiconductor layer deposited on a wafer removing a remaining semiconductor layer on the wafer through a chemical or physical process, and washing the wafer.

"In an embodiment, a wafer recycling method comprises separating an atom binding of a semiconductor layer deposited on a wafer by varying a temperature and pressure conditions, and washing the wafer.

"It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory, and are intended to provide further explanation of the invention as claimed."

For additional information on this patent, see: Kim, Kyung Jun; Son, Hyo Kun. Wafer Recycling Method. U.S. Patent Number 8709954, filed June 23, 2008, and published online on April 29, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=86&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=4261&f=G&l=50&co1=AND&d=PTXT&s1=20140429.PD.&OS=ISD/20140429&RS=ISD/20140429

Keywords for this news article include: Electronics, Semiconductor, LG Innotek Co. Ltd..

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Source: Electronics Newsweekly