News Column

Patent Issued for Resistor and Manufacturing Method

May 14, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Alexandria, Virginia, VerticalNews journalists report that a patent by the inventors Tseng, Chi-Sheng (Tainan, TW); Wang, Yao-Chang (Tainan, TW); Yang, Jie-Ning (Ping-Tung County, TW), filed on April 12, 2012, was published online on April 29, 2014.

The patent's assignee for patent number 8710593 is United Microelectronics Corp. (Science-Based Industrial Park, Hsin-Chu, TW).

News editors obtained the following quote from the background information supplied by the inventors: "The invention relates to a resistor and a manufacturing method thereof, and more particularly, to a resistor and a method of manufacturing a resistor integrated with a transistor having metal gate.

"To increase the performance of transistors, metal gates are prevalently used in the semiconductor field: the metal gates competent to the high dielectric constant (high-k) gate dielectric layer are used to replace the traditional polysilicon gates to be the control electrode. The metal gate approach can be categorized to the gate first process and the gate last process. And the gate last process gradually replaces the gate first process because a range of material choices for the high-k gate dielectric layer and the metal gate are expanded.

"Additionally, resistors are elements which are often used for providing regulated voltage and for filtering noise in a circuit. The resistors generally include polysilicon and silicide layers.

"In the current semiconductor field, though the fabricating processes are improved with the aim of reaching high yields, it is found that integration of the manufacturing methods of those different kinds of semiconductor devices is very complicated and difficult. Therefore, a method for fabricating a resistor integrated with a transistor having metal gate is still in need."

As a supplement to the background information on this patent, VerticalNews correspondents also obtained the inventors' summary information for this patent: "According to an aspect of the present invention, a manufacturing method for a resistor integrated with a transistor having metal gate is provided. The manufacturing method includes providing a substrate having a transistor, a transitional structure, and a dielectric layer covering the transistor and the transitional structure formed thereon; forming a recess in between two opposite polysilicon end portions in the transitional structure; forming a U-shaped resistance modulating (R-modulating) layer in the recess and an insulating layer filling in the recess; removing a dummy gate and the polysilicon end portions of the transitional structure to form a gate trench and a pair of terminal trenches, respectively; and forming a metal gate in the gate trench and conductive terminals in the terminal trenches simultaneously.

"According to another aspect of the present invention, a resistor integrated with a transistor having metal gate is provided. The resistor integrated with the transistor includes a substrate; a transistor positioned on the substrate, the transistor comprising a metal gate; and a resistor positioned on the substrate. The transistor includes a metal gate. The resistor further includes a pair of conductive terminals positioned at two opposite ends of the resistor respectively, a U-shaped R-modulating layer positioned in between the conductive terminals; and an insulating layer positioned in between the conductive terminals and encompassed by the U-shaped R-modulating layer.

"According to the manufacturing method for a resistor integrated with a transistor having metal gate provided by the present invention, the U-shaped R-modulating layer and the insulating layer are provided to replace the polysilicon main portion of the conventional resistor. Therefore, during removing the polysilicon at where intended to form the conductive terminals, lateral etching is avoided due to the difference between the etching rate of U-shaped R-modulating layer and of the insulating layer and polysilicon. Consequently, profile of the resistor main portion is protected and intact after the etching. As a result, yield of the manufacturing method and reliability and stability of the resistor are all improved.

"These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings."

For additional information on this patent, see: Tseng, Chi-Sheng; Wang, Yao-Chang; Yang, Jie-Ning. Resistor and Manufacturing Method. U.S. Patent Number 8710593, filed April 12, 2012, and published online on April 29, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=73&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=3626&f=G&l=50&co1=AND&d=PTXT&s1=20140429.PD.&OS=ISD/20140429&RS=ISD/20140429

Keywords for this news article include: Semiconductor, United Microelectronics Corp.

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Source: Electronics Newsweekly


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