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Patent Issued for Radiation-Emitting Semiconductor Chip and Method for Producing a Radiation-Emitting Semiconductor Chip

May 14, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- According to news reporting originating from Alexandria, Virginia, by VerticalNews journalists, a patent by the inventors Engl, Karl (Niedergebraching, DE); Hahn, Berthold (Hemau, DE); Streubel, Klaus (Laaber, DE); Klein, Markus (Tegernheim, DE), filed on June 25, 2009, was published online on April 29, 2014.

The assignee for this patent, patent number 8710537, is OSRAM Opto Semiconductors GmbH (DE).

Reporters obtained the following quote from the background information supplied by the inventors: "In radiation-emitting semiconductor chips, for example, in light-emitting diodes, electrostatic discharge can lead to damage which can result in destruction. Such damage can be avoided by an additional diode connected in parallel with the semiconductor chip, wherein the forward direction of the diode and the forward direction of the radiation-emitting semiconductor chip are directed in antiparallel with respect to one another. This additional diode increases both the space requirement and the production costs. Furthermore, such an additional diode can lead to the absorption of radiation, as a result of which the usable optical power of the component is reduced.

"It could therefore be helpful to provide a radiation-emitting semiconductor chip which has a reduced sensitivity toward electrostatic discharge. Furthermore, it could be helpful to provide a method for producing such a radiation-emitting semiconductor chip."

In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventors' summary information for this patent: "We provide a radiation-emitting semiconductor chip comprising: a carrier and a semiconductor body with a semiconductor layer sequence comprising an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.

"We also provide a method for producing a radiation-emitting semiconductor chip comprising: a) providing a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; b) forming a recess in the semiconductor body which extends through the active region into the first semiconductor layer; c) forming a first connection layer on the semiconductor body, the first connection layer extends into the recess, and the first connection layer is electrically connected to the second semiconductor layer via a protective diode; and d) completing the semiconductor chip."

For more information, see this patent: Engl, Karl; Hahn, Berthold; Streubel, Klaus; Klein, Markus. Radiation-Emitting Semiconductor Chip and Method for Producing a Radiation-Emitting Semiconductor Chip. U.S. Patent Number 8710537, filed June 25, 2009, and published online on April 29, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=74&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=3681&f=G&l=50&co1=AND&d=PTXT&s1=20140429.PD.&OS=ISD/20140429&RS=ISD/20140429

Keywords for this news article include: Electronics, OSRAM Opto Semiconductors GmbH.

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Source: Electronics Newsweekly


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