News Column

Patent Issued for Micromachined Devices and Fabricating the Same

May 14, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- Fairchild Semiconductor Corporation (San Jose, CA) has been issued patent number 8710599, according to news reporting originating out of Alexandria, Virginia, by VerticalNews editors.

The patent's inventors are Marx, David Lambe (Pleasanton, CA); Acar, Cenk (Irvine, CA); Akkaraju, Sandeep (Charlestown, MA); Bryzek, Janusz (Oakland, CA).

This patent was filed on August 3, 2010 and was published online on April 29, 2014.

From the background information supplied by the inventors, news correspondents obtained the following quote: "The present invention generally relates to inertial sensor devices and, more particularly, to micromachined inertial sensor devices and methods for making the devices.

"With the rapid advance of modern electronic technology, various electronic devices, such as navigation systems, cell phones, and electronic games, require sensors that can accurately determine motions of the devices at low cost with small form factor. Conventional techniques have been developed to bump micro-electro-mechanical-systems (MEMS) chips on ASIC wafers or integrate MEMS with ASIC wafers. However, majority of the existing MEMS sensors measure either acceleration or rotation, but not the 6 degrees-of-freedom (three independent accelerations and three independent rotations) of an object. As such, the existing ASIC wafers for detecting the motion of an object in 6 DOF have large form factors to accommodate multiple MEMS sensors and extra circuits or algorithms to handle the data received from the multiple sensors. Furthermore, fabrication of multiple MEMS and packaging/integration of MEMS with ASIC wafers increase the manufacturing cost of the sensor devices. Thus, there is a need for a single MEMS device that can detect the motion of an object in 6 DOF so that the overall form factor and manufacturing cost of a sensor device that contains the MEMS can be significantly reduced."

Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "In one embodiment of the present invention, a method for fabricating a device includes: providing a first wafer having at least one via; bonding a second wafer having a substantially uniform thickness to the first wafer; and etching the bonded second wafer to form a micro-electromechanical-systems (MEMS) layer.

"In another embodiment of the present invention, a device includes: a first wafer having at least one via; and a second wafer having a micro-electromechanical-systems (MEMS) layer and bonded to the first wafer. The via forms a closed loop when viewed in a direction normal to a top surface of the first wafer to thereby define an island electrically isolated.

"These and other features, aspects and advantages of the present invention will become better understood with reference to the following drawings, description, and claims."

For the URL and additional information on this patent, see: Marx, David Lambe; Acar, Cenk; Akkaraju, Sandeep; Bryzek, Janusz. Micromachined Devices and Fabricating the Same. U.S. Patent Number 8710599, filed August 3, 2010, and published online on April 29, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=73&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=3620&f=G&l=50&co1=AND&d=PTXT&s1=20140429.PD.&OS=ISD/20140429&RS=ISD/20140429

Keywords for this news article include: Electronics, Fairchild Semiconductor Corporation.

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Electronics Newsweekly


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