Patent number 8729525 is assigned to
The following quote was obtained by the news editors from the background information supplied by the inventors: "This application discloses an opto-electronic device and more particularly to the light-emitting device having a multi-quantum well structure.
"This application claims the right of priority based on TW application Ser. No. 097132545, filed
"The light-emitting diodes (LEDs) have the characteristics of small volume, long operational life, low driving voltage, low power consumption, quick response, and shockproof so the LEDs have been widely used in cars, computers, communications, and consumer electronics products.
"Generally speaking, the light emitting diodes (LEDs) have an active layer sandwiched by two cladding layers having different conductivity type (for example, the p-type and the n-type cladding layers). When applying a driving voltage to the contact electrodes located on the two cladding layers, the electrons and the holes from the two cladding layers will be injected into the active layer, and combine in the active layer to generate light. The light is omnidirectional and is extracted from every surface of the light emitting diodes. Usually, the active layer can be a single quantum well structure or a multi-quantum well structure. Comparing to the single quantum well structure, the multi-quantum well structure has better opto-electronic converting efficiency. It can convert current into light through a small bandgap structure alternately arranged by many quantum barrier layers and many quantum well layers even when the input current is small.
"However, the multi-quantum well structure is easily influenced by the carrier overflow effects and the piezoelectric field effect which makes it difficult to limit the electrons and holes in the multi-quantum well structure efficiently for combination so the light extraction efficiency of the light emitting diodes can't be improved efficiently."
In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventors' summary information for this patent: "The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier.
"In one embodiment of this application, the energy barrier of the barrier tuning layer is larger than that of other barrier layers. The dopant of the barrier tuning layer is Al, and the thickness of the barrier tuning layer can be smaller than that of other barrier layer or smaller or equal to 90 .ANG..
"In one embodiment of this application, the energy barrier of the barrier tuning layer is smaller than that of other barrier layers. The dopant of the barrier tuning layer is In, and the barrier tuning layer can be a single layer or multiple layers.
"The opto-electronic device as described above, by having the barrier tuning layer adjacent to the p-type cladding layer, the energy barrier is different from that of other barrier layers in the active layer. The barrier tuning layer can increase the opportunity of the combination of the electrons and the holes to increase the light extraction efficiency."
URL and more information on this patent, see: Chu, Jui-Yi; Kuo, Cheng-Ta; Hsu, Yu-Pin; Wang, Chun-Kai; Wu, Hsin-Hsien; Lin, Yi-Chieh. Opto-Electronic Device. U.S. Patent Number 8729525, filed
Keywords for this news article include: Electronics,
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