News Column

New Nanowires Study Results Reported from G. Signorello et al

June 4, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- Research findings on Nanowires are discussed in a new report. According to news originating from Trondheim, Norway, by VerticalNews correspondents, research stated, "Many efficient light-emitting devices and photodetectors are based on semiconductors with, respectively, a direct or indirect bandgap configuration. The less known pseudodirect bandgap configuration can be found in wurtzite (WZ) semiconductors: here electron and hole wave-functions overlap strongly but optical transitions between these states are impaired by symmetry."

Our news journalists obtained a quote from the research, "Switching between bandgap configurations would enable novel photonic applications but large anisotropic strain is normally needed to induce such band structure transitions. Here we show that the luminescence of WZ GaAs nanowires can be switched on and off, by inducing a reversible direct-to-pseudodirect band structure transition, under the influence of a small uniaxial stress. For the first time, we clarify the band structure of WZ GaAs, providing a conclusive picture of the energy and symmetry of the electronic states."

According to the news editors, the research concluded: "We envisage a new generation of devices that can simultaneously serve as efficient light emitters and photodetectors by leveraging the strain degree of freedom."

For more information on this research see: Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress. Nature Communications, 2014;5():87-94. Nature Communications can be contacted at: Nature Publishing Group, Macmillan Building, 4 Crinan St, London N1 9XW, England. (Nature Publishing Group - www.nature.com/; Nature Communications - www.nature.com/ncomms/)

The news correspondents report that additional information may be obtained from G. Signorello, CrayoNano AS, NO-7052 Trondheim, Norway. Additional authors for this research include E. Lortscher, P.A. Khomyakov, S. Karg, D.L. Dheeraj, B. Gotsmann, H. Weman and H. Riel.

Keywords for this news article include: Norway, Europe, Trondheim, Electronics, Semiconductor, Nanotechnology, Emerging Technologies

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Electronics Newsweekly


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