News Column

Findings from New Jersey Institute of Technology Yields New Data on Thin Solid Films

May 27, 2014



By a News Reporter-Staff News Editor at Journal of Technology -- Current study results on Thin Solid Films have been published. According to news reporting originating from Newark, New Jersey, by VerticalNews correspondents, research stated, "A model consisting of Shockley Read Hall (SRH) recombination under steady state conditions of constant photon injection is proposed in this work to study the steady state minority carrier lifetime in CdS/CdTe thin film solar cells. The SRH recombination rate versus optical injection level is analytically approximated in the junction and neutral regions."

Our news editors obtained a quote from the research from the New Jersey Institute of Technology, "In the neutral region, it is found that the recombination rate through certain defect levels has one constant value under lower optical injection conditions and another constant value under higher optical injection conditions with the transition occurring at a critical optical injection level. By simultaneously solving the equations of charge neutrality, charge conservation and SRH recombination in the neutral region, it is found that the compensation of doping and the reduction of minority carrier lifetime by donors in the p-type semiconductor can each be remedied by optical injection. It is also demonstrated that this optical-dependent SRH recombination is significant in large bandgap thin films. The measured minority carrier diffusion length in a CdS/CdTe solar cells, as determined from the steady-state photo-generated carrier collection efficiency, shows the predicted transition of minority carrier lifetime versus optical injection level."

According to the news editors, the research concluded: "A numerical fitting of the indirectly-measured minority carrier lifetime by assuming the minority carrier mobility gives a non-intuitive picture of the p-n junction with a low free hole concentration but a narrow depletion region width."

For more information on this research see: Steady state minority carrier lifetime and defect level occupation in thin film CdTe solar cells. Thin Solid Films, 2014;558():391-399. Thin Solid Films can be contacted at: Elsevier Science Sa, PO Box 564, 1001 Lausanne, Switzerland. (Elsevier - www.elsevier.com; Thin Solid Films - www.elsevier.com/wps/product/cws_home/504106)

The news editors report that additional information may be obtained by contacting Z.M. Cheng, New Jersey Inst Technol, CNBM New Energy Mat Res Center, Newark, NJ 07102, United States. Additional authors for this research include A.E. Delahoy, Z.Q. Su and K.K. Chin.

Keywords for this news article include: Newark, New Jersey, United States, Thin Solid Films, North and Central America

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Source: Journal of Technology