News Column

Researchers Submit Patent Application, "Rear-Face Illuminated Solid State Image Sensors", for Approval

May 21, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventors Humpston, Giles (Buckinghamshire, GB); Kriman, Moshe (Tel-Aviv, IL), filed on January 6, 2014, was made available online on May 8, 2014.

The patent's assignee is Invensas Corporation.

News editors obtained the following quote from the background information supplied by the inventors: "The subject matter shown and described in the present application relates to microelectronic image sensors and methods of fabricating, e.g., microelectronic image sensors.

"Solid state image sensors, e.g. charge-coupled devices, ('CCD') arrays, have a myriad of applications. For instance, they may be used to capture images in digital cameras, camcorders, cameras of cell phones and the like. One or more light detecting elements on a chip, along with the necessary electronics, are used to capture a 'pixel' or a picture element, a basic unit of an image.

"Improvements can be made to the structure of solid state image sensors and the processes used to fabricate them."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "In accordance with one embodiment, a microelectronic unit may include a semiconductor element having a front surface and a rear surface remote from the front surface, and a packaging layer attached to the front surface of the semiconductor element. The semiconductor element may include a light detector, which includes a plurality of light detector elements arranged in an array, disposed adjacent to the front surface and aligned with a portion of the rear surface to receive light through the rear surface portion, and a conductive contact at the front surface connected to the light detector. The conductive contact may include a thin region having a first thickness and a thicker region having a second thickness that is thicker than the first thickness. A conductive interconnect may extend through the packaging layer to the thin region of the conductive contact, and at least a portion of the conductive interconnect is exposed at a surface of the microelectronic unit.

"In another embodiment, a method of fabricating a microelectronic unit may include forming a recessed portion extending through a packaging layer attached to a front surface of a semiconductor element and terminating at a thin region of a conductive contact. The conductive contact is disposed at the front surface of the semiconductor element. The semiconductor element has a rear surface remote from the front surface and includes a light detector including a plurality of light detector elements arranged in an array. The light detector is disposed adjacent to the front surface, connected to the conductive contact and aligned with a portion of the rear surface to receive light through the rear surface portion. In addition, the conductive contact has a first thickness at the thin region and includes a thicker region having a second thickness that is thicker than the first thickness. The method further may include forming a conductive interconnect extending through the recessed portion to connect to the conductive contact at the thin region, where at least a portion of the conductive interconnect is exposed at a surface of the microelectronic unit.

"In accordance with another embodiment, a microelectronic unit may include a semiconductor element having a front surface, a rear surface remote from the front surface and a region consisting essentially of semiconductor material disposed between the front and rear surfaces. A first packaging layer may be attached to the front surface of the semiconductor element. The semiconductor element may include a light detector, which includes a plurality of light detector elements arranged in an array, disposed adjacent to the front surface and aligned with a portion of the rear surface to receive light through the rear surface portion. A conductive contact at the front surface is connected to the light detector. A packaging assembly having a second packaging layer may be attached to the rear surface of the semiconductor element. A conductive interconnect may extend through the first packaging layer, through the conductive contact and into the second packaging layer, and is connected to the conductive contact. The conductive interconnect is electrically isolated from the semiconductor region, and at least a portion of the conductive interconnect is exposed at a surface of the microelectronic unit.

"In one embodiment, an isolation region in the semiconductor element completely circumscribes the conductive contact so as to electrically isolate the conductive contact from the semiconductor region

BRIEF DESCRIPTION OF THE DRAWINGS

"FIGS. 1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1I, 1J, 1K, 1L, 1M, 1N, and 1O are partial sectional views illustrating stages in a method of fabricating a back side illuminated image sensor, according to an embodiment of the invention.

"FIG. 2 is a sectional view illustrating a packaged back side illuminated image sensor, according to an embodiment of the invention.

"FIG. 3 is a sectional view illustrating a packaged back side illuminated image sensor, according to another embodiment of the invention.

"FIG. 4 is a sectional view illustrating a packaged back side illuminated image sensor, according to another embodiment of the invention.

"FIG. 5 is a sectional view illustrating a packaged back side illuminated image sensor, according to another embodiment of the invention."

For additional information on this patent application, see: Humpston, Giles; Kriman, Moshe. Rear-Face Illuminated Solid State Image Sensors. Filed January 6, 2014 and posted May 8, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=2710&p=55&f=G&l=50&d=PG01&S1=20140501.PD.&OS=PD/20140501&RS=PD/20140501

Keywords for this news article include: Semiconductor, Microelectronics, Invensas Corporation.

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


For more stories covering the world of technology, please see HispanicBusiness' Tech Channel



Source: Electronics Newsweekly


Story Tools






HispanicBusiness.com Facebook Linkedin Twitter RSS Feed Email Alerts & Newsletters