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Researchers Submit Patent Application, "Monolithic Integrated Circuit", for Approval

May 21, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventor Kanaya, Ko (Tokyo, JP), filed on May 31, 2013, was made available online on May 8, 2014.

No assignee for this patent application has been made.

News editors obtained the following quote from the background information supplied by the inventors: "The present invention relates to a monolithic integrated circuit wherein a transistor and a diode are integrated on a single substrate.

"In recent years, considerable R&D effort has been expended on transistors made of nitride semiconductor material, and such transistors have been applied to high power amplifiers and low noise amplifiers, etc. Since low noise amplifiers formed of nitride semiconductor have a higher input power tolerance than low noise amplifiers of other material, a receiver circuit using a low noise amplifier of nitride semiconductor need not be provided with an isolator in the stage preceding the low noise amplifier. A mixer for down-conversion is connected to the stage following the low noise amplifier. In the case of direct conversion mixers, which are widely used, their noise factor is primarily dependent on the low-frequency noise of the devices used therein. Diodes are often used as devices in mixers. It is desired, however, that these diodes be vertical diodes, which do not have the problem of current flowing across the surface, and be formed by a homojunction in order to reduce low-frequency noise."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventor's summary information for this patent application: "In conventional monolithic integrated circuits, each diode is formed by shorting together the source and the drain of a transistor, and it is easy to integrate such diodes and lateral transistors together on a single substrate. In contrast, it is difficult to integrate vertical diodes, which have lower low-frequency noise than lateral diodes, and lateral transistors together on a single substrate.

"Further, a device has been proposed in which a diode layer is provided on a transistor layer, with a separation layer interposed therebetween (see, e.g., Japanese Laid-Open Patent Publication No. 2005-26242). This device has the problem of increased manufacturing cost, since it is necessary to form a diode layer separately from a transistor layer, in addition to forming a separation layer.

"In view of the above-described problems, an object of the present invention is to provide a monolithic integrated circuit which can integrate a lateral transistor and a vertical diode on a single substrate without additional manufacturing cost.

"According to the present invention, a monolithic integrated circuit includes: a substrate having a diode region and a transistor region; a first semiconductor layer on the substrate in the diode region and the transistor region; a second semiconductor layer on the first semiconductor layer in the diode region and the transistor region; a third semiconductor layer on the second semiconductor layer in the transistor region, the third semiconductor layer being not located in the diode region; a first electrode in the diode region and connected to the first semiconductor layer; a second electrode in the diode region and connected to the second semiconductor layer; and a source electrode, a gate electrode, and a drain electrode which are on the third semiconductor layer.

"The present invention makes it possible to integrate a lateral transistor and a vertical diode on a single substrate without additional manufacturing cost.

"Other and further objects, features and advantages of the invention will appear more fully from the following description.

BRIEF DESCRIPTION OF THE DRAWINGS

"FIG. 1 is a cross-sectional view showing a monolithic integrated circuit in accordance with a first embodiment of the present invention.

"FIG. 2 is a cross-sectional view showing a monolithic integrated circuit in accordance with a second embodiment of the present invention.

"FIG. 3 is a cross-sectional view showing a monolithic integrated circuit in accordance with a third embodiment of the present invention.

"FIG. 4 is a cross-sectional view showing a monolithic integrated circuit in accordance with a fourth embodiment of the present invention.

"FIG. 5 is a cross-sectional view showing a monolithic integrated circuit in accordance with a fifth embodiment of the present invention.

"FIG. 6 is a cross-sectional view showing a monolithic integrated circuit in accordance with a sixth embodiment of the present invention.

"FIG. 7 is a cross-sectional view showing a monolithic integrated circuit in accordance with a seventh embodiment of the present invention.

"FIG. 8 is a cross-sectional view showing a monolithic integrated circuit in accordance with an eighth embodiment of the present invention.

"FIG. 9 is a diagram showing a receiver circuit with a mixer in accordance with a ninth embodiment of the present invention.

"FIG. 10 is a diagram showing a voltage-controlled oscillator with a varactor in accordance with a tenth embodiment of the present invention.

"FIG. 11 is a diagram showing an amplifier with varactors in accordance with an eleventh embodiment of the present invention.

"FIG. 12 is a diagram showing an amplifier with a multiplier in accordance with a twelfth embodiment of the present invention.

"FIG. 13 is a diagram showing an amplifier with a protection circuit in accordance with a thirteenth embodiment of the present invention.

"FIG. 14 is a diagram showing a switch in accordance with a fourteenth embodiment of the present invention.

"FIG. 15 is a diagram showing a phase shifter in accordance with a fifteenth embodiment of the present invention.

"FIG. 16 is a diagram showing an amplifier with a linearizer in accordance with a sixteenth embodiment of the present invention.

"FIG. 17 is a diagram showing an inverter in accordance with a seventeenth embodiment of the present invention."

For additional information on this patent application, see: Kanaya, Ko. Monolithic Integrated Circuit. Filed May 31, 2013 and posted May 8, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=5947&p=119&f=G&l=50&d=PG01&S1=20140501.PD.&OS=PD/20140501&RS=PD/20140501

Keywords for this news article include: Patents, Electronics, Semiconductor.

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Source: Electronics Newsweekly


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