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Samsung announces operation of its memory facility in China

May 13, 2014



Samsung Electronics, Co., Ltd., a global leader in memory semiconductor technology, on Monday announced that its memory fabrication line in Xi'an China has begun full-scale manufacturing operations.

According to a press releases issued here stated that the new facility will manufacture Samsung's advanced NAND flash memory chips: 3D V-NAND. Samsung Electronics Vice Chairman and CEO Dr. Oh-Hyun Kwon hosted a plant inauguration event, which welcomed a large number of attendees including government dignitaries such as Zhao Zhengyong, Secretary of Communist Party of China Committee of Shaanxi province, Lou Qinjian, Governor of Shaanxi province, and Young-se Kwon, Ambassador of the Republic of Korea to the People's Republic of China. Other honored attendees included Samsung suppliers and customers.


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Source: National Herald Tribune (Pakistan)


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