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Researchers at Nankai University Target Silicon

May 6, 2014



By a News Reporter-Staff News Editor at Physics Week -- Investigators publish new report on Silicon. According to news reporting out of Tianjin, People's Republic of China, by VerticalNews editors, research stated, "In situ grown p-nc-Si:H/a-SiCx:H quantum dot superlattice has been prepared by RF-PECVD at a low temperature of 150 degrees C using layer by layer technique. This preparation method for fabricating superlattice allows controlling the properties of Si quantum dots in potential wells and the characteristics of potential barrier without subsequent annealing treatment, which is fully compatible with thin film Si technologies."

Our news journalists obtained a quote from the research from Nankai University, "High resolution transmission electron microscopy investigations confirm the superlattice structure of silicon quantum dots (similar to 2 nm diameter) separated by a-SiCx:H matrix (2-3 nm thickness) with several periods. Strong room-temperature photoluminescence and the blue-shift of the PL peak position with increasing barrier height are indicative of quantum confinement effects."

According to the news editors, the research concluded: "Applying p-nc-Si:H/a-SiCx:H superlattice as window layers, high open circuit voltage (> 0.99 V) was achieved for n-i-p type a-Si:H single junction solar cells."

For more information on this research see: In situ grown size-controlled silicon nanocrystals: A p type nanocrystalline-Si:H/a-SiCx:H superlattice (p-nc-Si:H/a-SiCx:H) approach. Solar Energy Materials and Solar Cells, 2014;123():228-232. Solar Energy Materials and Solar Cells can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier - www.elsevier.com; Solar Energy Materials and Solar Cells - www.elsevier.com/wps/product/cws_home/505675)

Our news journalists report that additional information may be obtained by contacting J. Ma, Nankai Univ, Inst Photoelect Thin Film Devices & Technical, Key Lab Photoelect Thin Film Devices & Technical Tianj, Key Lab Photoelect Informat Sci & TechnolMinist, Tianjin 300071, People's Republic of China. Additional authors for this research include J. Ni, J.J. Zhang, Q. Liu, G.F. Hou, X.L. Chen, X.D. Zhang and Y. Zhao.

Keywords for this news article include: Asia, Tianjin, Silicon, Quantum Dots, Nanotechnology, Nanocrystalline, Quantum Physics, Emerging Technologies, People's Republic of China

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Source: Physics Week