News Column

Patent Issued for Semiconductor Device Having Bit Line Expanding Islands

May 7, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- According to news reporting originating from Alexandria, Virginia, by VerticalNews journalists, a patent by the inventor Yeom, Kye-hee (Suwon-si, KR), filed on February 25, 2010, was published online on April 22, 2014.

The assignee for this patent, patent number 8704284, is Samsung Electronics Co., Ltd. (KR).

Reporters obtained the following quote from the background information supplied by the inventors: "The inventive subject matter relates to semiconductor devices, and more particularly, to semiconductor devices having bit line expanding islands capable of reliably expanding and connecting bit lines.

"With the rapid increase in the integration of semiconductor devices and the rapid decrease in a design rule of semiconductor devices, it has been important to secure sufficient process margins of bit lines. Although a plurality of bit lines are generally expanded in parallel to have the same widths, taps having wider widths than other regions of the plurality of bit lines may be further formed. However, because the taps are formed on the same layer as the plurality of bit lines, the taps may possibly obstruct the uniform formation of the plurality of bit lines."

In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventor's summary information for this patent: "According to an aspect of the inventive subject matter, there is provided a semiconductor device having bit line expanding islands, including: a semiconductor layer in which an isolation region and an active region are defined; an insulating layer, which is formed on the semiconductor layer; a plurality of bit lines, which are formed on the insulating layer; and one or more bit line expanding islands, which are formed inside the insulating layer and are electrically connected to a lower portion of at least one of the plurality of bit lines.

"The plurality of bit lines may have equal widths, keep a first distance from one another, and may be expanded in a first direction.

"The bit line expanding islands may electrically connect at least two of the plurality of bit lines to each other. The plurality of bit lines may be expanded in the first direction, and the bit line expanding islands may be expanded in a second direction crossing the first direction.

"The bit line expanding islands and the plurality of bit lines may comprise a same material or may comprise different materials.

"The bit line expanding islands may be disposed on the active region of the semiconductor layer to be electrically connected to the active region. The bit line expanding islands may be disposed on the isolation region of the semiconductor layer and may be electrically insulated from the semiconductor layer disposed underneath the isolation region. The bit line expanding islands may be disposed on gate structures formed on the active region of the semiconductor layer or on gate structures formed on the isolation region and electrically insulated from the gate structures.

"According to another aspect of the inventive subject matter, there is provided a semiconductor device having bit line expanding islands, including: a semiconductor layer; an insulating layer, which is formed on the semiconductor layer; a plurality of first bit lines, which are formed on the insulating layer and keep a first distance from one another; a plurality of second bit lines, which are formed on the insulating layer, disposed among the plurality of first bit lines, keep a second distance from one another, and keep a third distance from the plurality of first bit lines, wherein the third distance is less than the first and second distances; and a plurality of bit line expanding islands, which are formed in a portion of the insulating layer, each of which is disposed underneath a lower portion of one of the plurality of first bit lines and a lower portion of one of the plurality of second bit lines, and which electrically connect the plurality of first bit lines to the plurality of second bit lines.

"According to another aspect of the inventive subject matter, there is provided a semiconductor device having bit line expanding islands, including: a semiconductor layer in which a first cell region, a peripheral region, and a second cell region are defined; an insulating layer, which is formed on the semiconductor layer; a plurality of third bit lines, which are formed on the insulating layer and span at least portions of the first cell region and the peripheral region and keep a fourth distance from one another; a plurality of fourth bit lines, which are formed on the insulating layer and span at least a portion of the second cell region and keep a fifth distance from one another; and a plurality of bit line expanding islands, which are formed in a portion of the insulating layer, each of which is disposed underneath a lower portion of one of the plurality of third bit lines and a lower portion of one of the plurality of fourth bit lines, and which electrically connect the plurality of third bit lines to the plurality of fourth bit lines."

For more information, see this patent: Yeom, Kye-hee. Semiconductor Device Having Bit Line Expanding Islands. U.S. Patent Number 8704284, filed February 25, 2010, and published online on April 22, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=74&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=3693&f=G&l=50&co1=AND&d=PTXT&s1=20140422.PD.&OS=ISD/20140422&RS=ISD/20140422

Keywords for this news article include: Semiconductor, Samsung Electronics Co. Ltd..

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Source: Electronics Newsweekly