The news correspondents obtained a quote from the research from DGIST, "Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed."
According to the news reporters, the research concluded: "The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se-2."
For more information on this research see: Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)(4) thin films grown by sputtering-based two-step process. Nanoscale Research Letters, 2014;9():1-5. Nanoscale Research Letters can be contacted at: Springer,
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