The patent's inventors are Shim, Sunil (
This patent was filed on
From the background information supplied by the inventors, news correspondents obtained the following quote: "A semiconductor memory device in semiconductor devices may store digital data. As the electronic and semiconductor industries become highly sophisticated, the requirement for high-integration of semiconductor memory devices is gradually increasing. For example, as portable electronic devices such as laptop computers, mobile phones, digital cameras and MP3 players advance, requirements for semiconductor memory devices capable of storing more data are increasing. To satisfy these consumer requirements, highly integrated semiconductor memory devices are required.
"Generally, the minimum line width of fine patterns constituting a semiconductor memory device may be decreased for higher integration of a semiconductor memory device. By two-dimensionally decreasing the minimum line width of the fine pattern, more memory cells may be integrated in a limited area.
"However, due to various factors such as photolithography process parameters, the amount by which the minimum line width is decreased may be limited. Moreover, as the line widths of the fine patterns decrease, the characteristics of the fine patterns may be deteriorated, thereby reducing semiconductor memory device reliability. Accordingly, much research is actively being conducted in pursuit of new methods for implementing semiconductor memory devices that are highly integrated and have superior characteristics."
Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "Integrated circuit memory devices according to embodiments of the present invention include a transistor having a semiconductor channel region therein and a gate electrode extending opposite the semiconductor channel region. The transistor is configured to have a nonuniform threshold voltage characteristic along a length of the semiconductor channel region. To achieve this nonuniform threshold voltage, the semiconductor channel region may be nonuniformly doped and may be configured to have an L-shaped cross-section. In particular, the semiconductor channel region may include a first channel region segment extending opposite a sidewall of the gate electrode and a second channel region segment extending opposite a bottom of the gate electrode. This first channel region segment may be nonuniformly doped relative to the second channel region segment.
"According to additional embodiments of the invention, a non-volatile memory device includes a vertical NAND-type string of non-volatile memory cells on a substrate. A lower string selection transistor is also provided. The lower string selection transistor extends between the vertical NAND-type string of non-volatile memory cells and the substrate. The lower string selection transistor has a semiconductor channel region therein and a gate electrode extending opposite the semiconductor channel region. The lower string selection transistor has a nonuniform threshold voltage characteristic along a length of the semiconductor channel region. This non-volatile memory device also includes a common source region of first conductivity type in the substrate. The common source region, which forms a P-N rectifying junction with the semiconductor channel region, extends opposite a sidewall of the gate electrode. In some of these embodiments of the invention, the semiconductor channel region is nonuniformly doped and has an L-shaped cross-section. In particular, the semiconductor channel region may include a first channel region segment extending opposite a sidewall of the gate electrode and a second channel region segment extending opposite a bottom of the gate electrode. This first channel region segment may be nonuniformly doped relative to the second channel region segment."
For the URL and additional information on this patent, see: Shim, Sunil; Jeong, Jaehun; Kim, Hansoo; Hur, Sunghoi; Jang, Jaehoon; Yi, Su-Youn. Semiconductor Memory Devices Having Selection Transistors with Nonuniform Threshold Voltage Characteristics. U.S. Patent Number 8637920, filed
Keywords for this news article include: Semiconductor,
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