The patent's assignee for patent number 8637343 is
News editors obtained the following quote from the background information supplied by the inventors: "Organic field effect transistors (OFETs) are used in display devices and logic capable circuits. A conventional OFET typically comprises source, drain and gate electrodes, an semiconducting layer comprising an organic semiconductor (OSC) material, and a gate insulator layer comprising a dielectric material.
"For the preparation of a bottom gate device, usually the source and/or drain electrode layer comprising a metal or metal oxide is deposited onto a dielectric layer provided on a substrate. This is typically done by a sputtering process and subsequent lithographic etching process to remove unwanted areas.
"Another conventional method of preparing a bottom gate OFET comprises the application of a patterned bank structure onto the dielectric and source/drain electrode layer, followed by deposition of an OSC layer, usually by inkjet printing, onto the bank structure, the dielectric and electrode layer. For the purpose of OSC layer positioning the surface of the bank structure is often subjected to a plasma treatment process before the OSC layer is applied, for example by exposure to a CF.sub.4 plasma or O.sub.2 plasma. CF4-plasma leads to a Teflon like, extreme hydrophobic surface (very low surface energy), which directs the inkjet drops not deposited accurately enough into the bank structure cavity.
"However, it was observed that in the above-mentioned OFET preparation methods the electrode sputtering process and the plasma treatment process can cause significant damage on the exposed parts of the surface of the dielectric layer. As a result, the performance of device subjected to such a process is deteriorating.
"It is therefore an aim of the present invention to provide an improved process for preparing electronic devices, in particular OFETs, which does not have the drawbacks of prior art methods and allows time-, cost- and material-effective production of electronic devices on large scale, especially with improved protection of the dielectric layer and other functional layers against plasma surface treatment techniques or plasma assisted deposition techniques that are applied during the device manufacturing process. Another aim of the invention is to provide improved electronic devices, especially OFETs, obtained by such a process. Other aims of the present invention are immediately evident to the expert from the following detailed description.
"It was found that these aims can be achieved by providing methods, materials and devices as claimed in the present invention."
As a supplement to the background information on this patent, VerticalNews correspondents also obtained the inventors' summary information for this patent: "The invention relates to a process for preparing an electronic device comprising a dielectric layer and at least one further functional layer, comprising the step of applying one or more additional layers or components on top of said dielectric layer or functional layer, wherein a protection layer is applied on top of said dielectric layer or on top of said functional layer before applying the additional layers or components. The protection layer has the purpose to reduce or prevent damage in the dielectric layer or in the further functional layer that may be caused by subsequent manufacturing or processing steps of the device, in particular by subsequent steps of applying or processing one or more additional layers or components.
"The invention further relates to a process for preparing an electronic device, wherein at least one additional functional layer is applied onto the protection layer, and optionally the protection layer is partially removed after applying or processing at least one of said additional layers.
"The invention further relates to a process for preparing an electronic device, comprising the steps of applying a protection layer (4) on top of a dielectric layer (3) or on top of an organic semiconductor (OSC) layer (7), optionally subjecting said protection layer to plasma treatment and/or applying a further layer on at least some parts of the protection layer (4), optionally patterning said further layer, and optionally removing those parts of the protection layer (4) that have been exposed to the plasma, or are not covered by the further layer after patterning. Preferably said further layer is a conductor, very preferably an electrode.
"The invention further relates to a process for preparing an electronic device as described above and below, wherein those parts of the protection layer (4) that are not covered by the conductor or electrode layer provided onto it are removed.
"The invention further relates to an electronic device obtained by a process as described above and below.
"Preferably the electronic device is an organic field effect transistor (OFET), integrated circuit (IC), thin film transistor (TFT), Radio Frequency Identification (RFID) tag, organic photovoltaic (OPV) device, sensor or memory device."
For additional information on this patent, see: Mueller,
Keywords for this news article include: Treatment, Electronics, Semiconductor,
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