News Column

New Findings on Quantum Dots from University of Science and Technology Summarized

February 12, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- Data detailed on Quantum Dots have been presented. According to news reporting out of Guangdong, People's Republic of China, by VerticalNews editors, research stated, "An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively."

Our news journalists obtained a quote from the research from the University of Science and Technology, "Except for the electrodes, all other layers are deposited by a simple spin-coating method."

According to the news editors, the research concluded: "The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cd/m(2) at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cd/A, and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device."

For more information on this research see: Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers. ACS Applied Materials & Interfaces, 2014;6(1):495-499. ACS Applied Materials & Interfaces can be contacted at: Amer Chemical Soc, 1155 16TH St, NW, Washington, DC 20036, USA. (American Chemical Society - www.acs.org; ACS Applied Materials & Interfaces - www.pubs.acs.org/journal/aamick)

Our news journalists report that additional information may be obtained by contacting X.Y. Yang, South Univ Sci & Technol, Dept. of Elect & Elect Engn, Shenzhen 518055, Guangdong, People's Republic of China. Additional authors for this research include Y.Y. Ma, E. Mutlugun, Y.B. Zhao, K.S. Leck, S.T. Tan, H.V. Demir, Q.Y. Zhang, H.J. Du and X.W. Sun.

Keywords for this news article include: Asia, Guangdong, Electronics, Quantum Dots, Nanotechnology, Light-emitting Diode, Emerging Technologies, People's Republic of China

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Source: Electronics Newsweekly


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