News Column

Patent Issued for Semiconductor Structure Having Wide and Narrow Deep Trenches with Different Materials

March 5, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventors Parries, Paul C. (Wappingers Falls, NY); Zhang, Yanli (San Jose, CA), filed on November 11, 2010, was published online on February 18, 2014, according to news reporting originating from Alexandria, Virginia, by VerticalNews correspondents.

Patent number 8652933 is assigned to International Business Machines Corporation (Armonk, NY).

The following quote was obtained by the news editors from the background information supplied by the inventors: "The present invention relates to the field of semiconductor structures and, more particularly, relates to methods of forming semiconductor structures having different width trenches filled with different materials.

"In semiconductor structures, there may be first deep trenches to separate different circuit regions. Some of these different circuit regions may also have second deep trenches for circuit design. Further, the first and second deep trenches may be of different widths."

In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventors' summary information for this patent: "The various advantages and purposes of the exemplary embodiments as described above and hereafter are achieved by providing, according to a first aspect of the exemplary embodiments, a method of forming a semiconductor device structure in a semiconductor layer. The method includes forming a first trench of a first width and a second trench of a second width in the semiconductor layer; depositing a layer of first material which conforms to a wall of the first trench but does not fill it and which fills the second trench; removing the first material from the first trench, the first material remaining in the second trench; depositing a second material into and filling the first trench and over a top of the first material in the second trench; and uniformly removing the second material from the top of the first material in the second trench, wherein the first trench is filled with the second material and the second trench is filled with the first material and wherein the first material is different from the second material.

"According to a second aspect of the invention, there is provided a method of forming a semiconductor device structure in a semiconductor layer. The method includes forming a first trench of a first width and a second trench of a second width in the semiconductor layer; depositing a layer of polysilicon which conforms to a wall of the first trench but does not fill it and which fills the second trench; removing the polysilicon from the first trench, the polysilicon remaining in the second trench; depositing oxide into and filling the first trench and over a top of the polysilicon in the second trench; and uniformly removing the oxide from the top of the polysilicon in the second trench, wherein the first trench is filled with an oxide and the second trench is filled with polysilicon.

"According to a third aspect of the invention, there is provided a method of forming a semiconductor device structure in a semiconductor layer. The method includes forming a semiconductor substrate having a semiconductor layer, a pad nitride layer and an oxide hard mask; forming a first trench of a first width and a second trench of a second width through the oxide hard mask and pad nitride and penetrating at least into the semiconductor layer; depositing a layer of polysilicon over the oxide hard mask and into the first trench and second trench, the polysilicon conforming to a wall of the first trench but not filling it and filling the second trench; removing the polysilicon from the first trench, the polysilicon remaining in the second trench; depositing oxide over the oxide hard mask and into and filling the first trench and over a top of the second trench; and uniformly removing the deposited oxide and stopping on the top of the polysilicon in the second trench, wherein the first trench is filled with an oxide and the second trench is filled with polysilicon.

"According to a fourth aspect of the invention, there is provided a method of forming a semiconductor device structure in a semiconductor layer. The method includes forming a semiconductor substrate having a semiconductor layer, a pad nitride layer and an oxide hard mask; forming a first trench of a first width and a second trench of a second width through the oxide hard mask and pad nitride and penetrating at least into the semiconductor layer; depositing a conformal liner in the first trench and second trench; depositing a layer of polysilicon over the oxide hard mask and into the first trench and second trench, the polysilicon conforming to the liner of the first trench but not filling it and filling the second trench; removing the polysilicon from the first trench, the polysilicon remaining in the second trench; removing the liner from the first trench; depositing oxide over the oxide hard mask and into and filling the first trench and over a top of the second trench; and uniformly removing the deposited oxide and stopping on the top of the polysilicon in the second trench, wherein the first trench is filled with an oxide and the second trench is filled with polysilicon."

URL and more information on this patent, see: Parries, Paul C.; Zhang, Yanli. Semiconductor Structure Having Wide and Narrow Deep Trenches with Different Materials. U.S. Patent Number 8652933, filed November 11, 2010, and published online on February 18, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=82&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=4075&f=G&l=50&co1=AND&d=PTXT&s1=20140218.PD.&OS=ISD/20140218&RS=ISD/20140218

Keywords for this news article include: Electronics, Semiconductor, International Business Machines Corporation.

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Source: Electronics Newsweekly


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