News Column

Patent Issued for Semiconductor Light Emitting Device

March 5, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventors Lim, Woo Sik (Gwangju, KR); Choo, Sung Ho (Gwangju, KR), filed on December 23, 2009, was published online on February 18, 2014, according to news reporting originating from Alexandria, Virginia, by VerticalNews correspondents.

Patent number 8653545 is assigned to LG Innotek Co., Ltd. (Seoul, KR).

The following quote was obtained by the news editors from the background information supplied by the inventors: "The present disclosure relates to a semiconductor light emitting device.

"Group III-V nitride semiconductors have been in the spotlight as a core material for light emitting devices, such as light emitting diodes (LEDs), laser diodes (LDs), and the like, because of their excellent physical and chemical properties. Group III-V nitride semiconductors are composed of a semiconductor material having the chemical formula of In.sub.xAl.sub.yGa.sub.1-x-yN (where 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.x+y.ltoreq.1).

"LEDs are a kind of semiconductor device that converts electricity into infrared rays or light by using the characteristics of a compound semiconductor to transmit and receive a signal, and they are used as light sources.

"LEDs or LDs made of nitride semiconductor materials are widely adopted in light emitting devices for obtaining light, and are applied as light sources for various products, for example, a light emission part for a keypad of a mobile phone, an electrical sign board, and a lighting device."

In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventors' summary information for this patent: "Embodiments provide a semiconductor light emitting device including an electrode structure.

"Embodiments provide a semiconductor light emitting device including a first electrode having at least one branch on a first conductive type semiconductor layer.

"Embodiments provide a semiconductor light emitting device including a first electrode and a second electrode, parts of patterns of which overlap each other or are disposed alternately with each other.

"An embodiment provides a semiconductor light emitting device, including: a first conductive type semiconductor layer; a first electrode on a first portion of the first conductive type semiconductor layer and having at least one branch; an insulating layer covering the first electrode; and an electrode layer having a first portion directly on the insulating layer, the electrode layer having a second portion above a second portion of the first conductive type semiconductor different from the first portion of the first conductive type semiconductor layer.

"An embodiment provides a semiconductor light emitting device, including: a first conductive type semiconductor layer; a first electrode on a first portion of the first conductive type semiconductor layer and having at least one branch; an insulating layer covering the first electrode; an electrode layer on the insulating layer; an opening in the insulating layer and the electrode layer arranged to expose a portion of the first electrode; and a first electrode pad formed in the opening and on the exposed portion of the first electrode.

"An embodiment provides a semiconductor light emitting device, including: a first conductive type semiconductor layer; a first electrode on a first portion of the first conductive type semiconductor layer and having at least one branch; an insulating layer covering the first electrode; an electrode layer on the insulating layer; an active layer on the first conductive type semiconductor layer; a second conductive type semiconductor layer between the active layer and the electrode layer; a second electrode pad electrically connected to at least one of the electrode layer and the second conductive type semiconductor layer; and a second electrode on the electrode layer and having at least one branch.

"The details of one or more embodiments are set forth in the accompanying drawings and the description below. Other features will be apparent from the description and drawings, and from the claims."

URL and more information on this patent, see: Lim, Woo Sik; Choo, Sung Ho. Semiconductor Light Emitting Device. U.S. Patent Number 8653545, filed December 23, 2009, and published online on February 18, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=70&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=3466&f=G&l=50&co1=AND&d=PTXT&s1=20140218.PD.&OS=ISD/20140218&RS=ISD/20140218

Keywords for this news article include: Electronics, Semiconductor, LG Innotek Co. Ltd..

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Source: Electronics Newsweekly


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