The patent's assignee is
News editors obtained the following quote from the background information supplied by the inventors: "GaN-based light-emitting diodes (LEDs) have been popular recently. Sapphire is the most commonly used substrate in the epitaxy growth of LED devices, but limits the devices performance due to its poor electrical and thermal conductivity. Ultraviolet (UV) laser lift-off (LLO) technology has been developed for transferring GaN LED thin films from a sapphire substrate to a Si or Cu substrate without degrading the crystal quality. Two common issues with LLO procedures are incomplete decomposition at the chip edges and partitioning the diced chip into smaller regions.
"Chips, notches, polishing imperfections, and the optical effects at the sapphire boundaries may cause incomplete decomposition locally within the LLO layer. Upon separation of the substrate and film, this may cause film damage, especially cracking.
"Patterning the LLO region into portions smaller than the diced piece may often be desired. The typical method for doing this is by patterning and etching through the LED to the sapphire substrate to partition the intended LLO regions prior to dicing. Many techniques use a wet or plasma etching process employing a photolithography step to partition LLO regions."
As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "One disclosed feature of the embodiments is a method and apparatus to induce flaw formation in nitride semiconductors. Regions of a thin film structure are selectively decomposed within a thin film layer to form flaws in a pre-determined pattern within the thin film structure. The flaws locally concentrate stress in the pre-determined pattern during a stress-inducing operation. The stress-inducing operation is performed. The stress-inducing operation causes the thin film layer to fracture at the pre-determined pattern.
"One disclosed feature of the embodiments is an apparatus having flaws in nitride semiconductors. A thin film layer of a thin film structure has flaws formed in a pre-determined pattern. The flaws locally concentrate stress in the pre-determined pattern during a stress-inducing operation. A substrate attached to the thin film layer is removed in the stress-inducing operation.
BRIEF DESCRIPTION OF THE DRAWINGS
"Embodiments may best be understood by referring to the following description and accompanying drawings that are used to illustrate various embodiments. In the drawings.
"FIG. 1 is a diagram illustrating a system using laser to irradiate from top surface of the thin film structure according to one embodiment.
"FIG. 2 is a diagram illustrating a system using laser to irradiate from backside of the LED structure according to one embodiment.
"FIG. 3 is a diagram illustrating irradiation surface of the thin film structure according to one embodiment.
"FIG. 4 is a flowchart illustrating a process to form flaws in nitride semiconductors according to one embodiment.
"FIG. 5 is a flowchart illustrating a process to selectively decompose regions of the thin film structure according to one embodiment.
"FIG. 6 is a flowchart illustrating a process to irradiate the thin film structure according to one embodiment."
For additional information on this patent application, see: Knollenberg, Clifford F.; Wong, William S.; Chua, Christopher L. Laser-Induced Flaw Formation in Nitride Semiconductors. Filed
Keywords for this news article include: Electronics, Semiconductor,
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