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Patent Issued for Semiconductor Light Emitting Device Having One Or More Recesses on a Layer

February 26, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Alexandria, Virginia, VerticalNews journalists report that a patent by the inventor Choi, Sung Min (Suwon-si, KR), filed on August 9, 2012, was published online on February 11, 2014.

The patent's assignee for patent number 8648355 is LG Innotek Co., Ltd. (Seoul, KR).

News editors obtained the following quote from the background information supplied by the inventors: "The present disclosure relates to a semiconductor light emitting device.

"Groups III-V nitride semiconductors have been variously applied to an optical device such as blue and green light emitting diodes (LED), a high speed switching device, such as a MOSFET (Metal Semiconductor Field Effect Transistor) and an HEMT (Hetero junction Field Effect Transistors), and a light source of a lighting device or a display device.

"The nitride semiconductor is mainly used for the LED (Light Emitting Diode) or an LD (laser diode), and studies have been continuously conducted to improve the manufacturing process or a light efficiency of the nitride semiconductor."

As a supplement to the background information on this patent, VerticalNews correspondents also obtained the inventor's summary information for this patent: "The embodiment provides a semiconductor light emitting device comprising a compound semiconductor layer provided therein with recesses.

"The embodiment provides a semiconductor light emitting device comprising a plurality of compound semiconductor layers provided at a threading dislocation region thereof with a recess.

"The embodiment provides a semiconductor light emitting device comprising a compound semiconductor layer and a recess corresponding to a threading dislocation of an electrode layer.

"An embodiment provides a semiconductor light emitting device comprising: a substrate; a light emitting structure comprising a first conductive semiconductor layer on the substrate, a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; an electrode layer on the second conductive semiconductor layer; and an electrode on the electrode layer, wherein the substrate comprises a plurality of convex portions protruded from the substrate, wherein the second conductive semiconductor layer comprises a first surface adjacent to the active layer and a second surface opposite to the first surface, wherein the electrode layer comprises a plurality of holes corresponding to a region of at least one of the plurality of convex portions of the substrate, wherein an insulating material is disposed in the plurality of holes on the light emitting structure.

"An embodiment provides a semiconductor light emitting device comprising: a light emitting structure comprising a first conductive semiconductor layer on the substrate, a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; an electrode layer on the second conductive semiconductor layer; and a metal layer on the first electrode layer; an electrode connected to the first conductive semiconductor layer; wherein the second conductive semiconductor layer comprises a first surface adjacent to the active layer and a second surface opposite to the first surface, wherein the first electrode layer comprises a plurality of holes, wherein the plurality of holes has an insulating material therein, wherein the metal layer has a width equal to or wider than that of the electrode layer, wherein the electrode layer contacts with the insulating material in the plurality of holes.

"An embodiment provides a semiconductor light emitting device comprising: a substrate comprising a plurality of convex portions formed in a material of the substrate; a light emitting structure comprising a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer, and a plurality of second conductive semiconductor layers on the active layer; an electrode layer on the light emitting structure and formed in a transmissive material; a plurality of recesses in the plurality of second conductive semiconductor layers on the active layer; a plurality of holes in the electrode layer; a threading dislocation between the plurality of recesses and the plurality of convex portions; and an insulating material disposed in the plurality of holes and the plurality of recesses."

For additional information on this patent, see: Choi, Sung Min. Semiconductor Light Emitting Device Having One Or More Recesses on a Layer. U.S. Patent Number 8648355, filed August 9, 2012, and published online on February 11, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=55&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=2734&f=G&l=50&co1=AND&d=PTXT&s1=20140211.PD.&OS=ISD/20140211&RS=ISD/20140211

Keywords for this news article include: Electronics, Semiconductor, LG Innotek Co. Ltd..

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Source: Electronics Newsweekly


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