News Column

Patent Issued for LDMOS Sense Transistor Structure for Current Sensing at High Voltage

February 26, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- Texas Instruments Incorporated (Dallas, TX) has been issued patent number 8648416, according to news reporting originating out of Alexandria, Virginia, by VerticalNews editors.

The patent's inventors are Khayat, Joseph Maurice (Bedford, NH); Denison, Marie (Plano, TX).

This patent was filed on July 20, 2012 and was published online on February 11, 2014.

From the background information supplied by the inventors, news correspondents obtained the following quote: "An integrated circuit may contain a high voltage n-channel metal oxide semiconductor (MOS) power transistor which is configured to operate at a drain voltage which is significantly higher than an operating voltage for other transistors and circuits in the integrated circuit. For example, an integrated circuit which contains transistors and circuits which operate at 10 volts or less may also include a high voltage n-channel MOS transistor which operates at a drain voltage of over 300 volts and switches several amps. The body of the high voltage transistor may be directly connected to the substrate of the integrated circuit, for example to provide a simpler fabrication process for the integrated circuit, compared to an integrated circuit with an isolated high voltage transistor. It may be desirable to determine if current through the high voltage transistor is above a certain value when the high voltage transistor is in the on state, without increasing the fabrication complexity of the integrated circuit or unduly increasing the size of the integrated circuit."

Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "The following presents a simplified summary in order to provide a basic understanding of one or more aspects of the invention. This summary is not an extensive overview of the invention, and is neither intended to identify key or critical elements of the invention, nor to delineate the scope thereof. Rather, the primary purpose of the summary is to present some concepts of the invention in a simplified form as a prelude to a more detailed description that is presented later.

"An integrated circuit may include a high voltage n-channel MOS power transistor integrated with a high voltage n-channel MOS blocking transistor which have coupled drain terminals and aligned drift areas in their respective drain extensions. The drift areas are aligned so that breakdown does not occur between the power transistor and the blocking transistor. The body of the power transistor may be directly connected to the substrate of the integrated circuit, while the body of the blocking transistor is isolated from the substrate."

For the URL and additional information on this patent, see: Khayat, Joseph Maurice; Denison, Marie. LDMOS Sense Transistor Structure for Current Sensing at High Voltage. U.S. Patent Number 8648416, filed July 20, 2012, and published online on February 11, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=54&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=2674&f=G&l=50&co1=AND&d=PTXT&s1=20140211.PD.&OS=ISD/20140211&RS=ISD/20140211

Keywords for this news article include: Electronics, High Voltage, Texas Instruments Incorporated.

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


For more stories covering the world of technology, please see HispanicBusiness' Tech Channel



Source: Electronics Newsweekly


Story Tools