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Patent Application Titled "Vapor Deposition Apparatus and Method of Manufacturing Organic Light-Emitting Display Apparatus" Published Online

February 20, 2014



By a News Reporter-Staff News Editor at Politics & Government Week -- According to news reporting originating from Washington, D.C., by VerticalNews journalists, a patent application by the inventors KIM, Jae-Hyun (Yongin-City, KR); KIM, Jin-Kwang (Yongin-City, KR); HUH, Myung-Soo (Yongin-City, KR), filed on December 7, 2012, was made available online on February 6, 2014.

No assignee for this patent application has been made.

Reporters obtained the following quote from the background information supplied by the inventors: "Semiconductor devices, display devices, and other electronic devices include a plurality of thin films. Various methods may be used to form the plurality of thin films, one of which is a vapor deposition method."

In addition to obtaining background information on this patent application, VerticalNews editors also obtained the inventors' summary information for this patent application: "Embodiments may be realized by providing a vapor deposition apparatus for depositing a thin film on a substrate. The vapor deposition apparatus includes at least one first region having a first injecting unit for injecting a first raw material, a first purging unit for injecting a purge gas, and a first exhausting unit for performing a pumping operation and disposed between the first injecting unit and the first purging unit; at least one second region comprising a second injecting unit for injecting a second raw material, a second purging unit for injecting a purge gas, and a second exhausting unit for performing a pumping operation and disposed between the second injecting unit and the second purging unit; a first blocking unit A formed between the first exhausting unit and the first injecting unit and between the first exhausting unit and the first purging unit in the at least one first region so as not to allow the first exhausting unit and the first injecting unit to have a common region therebetween and not to allow the first exhausting unit and the first purging unit to have a common region therebetween; and a first blocking unit B formed between the second exhausting unit and the second injecting unit and between the second exhausting unit and the second purging unit in the at least one second region so as not to allow the second exhausting unit and the second injecting unit to have a common region therebetween and not to allow the second exhausting unit and the second purging unit to have a common region therebetween.

"The vapor deposition apparatus may further include a second blocking unit A that is formed adjacent to a side surface of the first injecting unit which is in an opposite direction with respect to the first exhausting unit and that is formed between the first injecting unit and a gas injecting unit of another second region adjacent to the first injecting unit, and the first blocking unit A may extend to correspond to at least the second blocking unit A.

"The vapor deposition apparatus may further include a second blocking unit A that is formed adjacent to a side surface of the first injecting unit which is in an opposite direction with respect to the first exhausting unit and that is formed between the first injecting unit and a gas injecting unit of another second region adjacent to the first injecting unit, and a bottom surface of the first blocking unit A and a bottom surface of the second blocking unit A may be in parallel, coplanar, with each other.

"The vapor deposition apparatus may further include a second blocking unit B that is formed adjacent to a side surface of the second injecting unit which is in an opposite direction with respect to the second exhausting unit and that is formed between the second injecting unit and a gas injecting unit of another first region adjacent to the second injecting unit, and the first blocking unit B may extend to correspond to at least the second blocking unit B.

"The vapor deposition apparatus may further include a second blocking unit B that is formed adjacent to a side surface of the second injecting unit which is in an opposite direction with respect to the second exhausting unit and that is formed between the second injecting unit and a gas injecting unit of another first region adjacent to the second injecting unit, and a bottom surface of the first blocking unit B and a bottom surface of the second blocking unit B may be in parallel, e.g., coplanar, with each other.

"The vapor deposition apparatus may further include a third blocking unit A that is formed adjacent to a side surface of the first purging unit which is in an opposite direction with respect to the first exhausting unit and that defines the first purging unit, and the first blocking unit A may extend to correspond to at least the third blocking unit A.

"The vapor deposition apparatus may further include a third blocking unit A that is formed adjacent to a side surface of the first purging unit which is in an opposite direction with respect to the first exhausting unit and that defines the first purging unit, and a bottom surface of the first blocking unit A and a bottom surface of the third blocking unit A may be in parallel, e.g., coplanar, with each other.

"The vapor deposition apparatus may further include a third blocking unit B that is formed adjacent to a side surface of the second purging unit which is in an opposite direction with respect to the second exhausting unit and that defines the second purging unit, and the first blocking unit B may extend to correspond to at least the third blocking unit B.

"The vapor deposition apparatus may further include a third blocking unit B that is formed adjacent to a side surface of the second purging unit which is in an opposite direction with respect to the second exhausting unit and that defines the second purging unit, and a bottom surface of the first blocking unit B and a bottom surface of the third blocking unit B may be in parallel, e.g., coplanar, with each other.

"The vapor deposition apparatus may further include a first curtain unit that is disposed between a first purging unit of the at least one first region and a second injecting unit of the at least one second region. The first purging unit may be disposed closer to the first exhausting unit than the first curtain unit. A gas pressure applied to the first purging unit may be greater than a gas pressure applied to the first curtain unit. A width of the first purging unit may be less than a width of the first curtain unit. A height of the first purging unit may be less than a height of the first curtain unit. A supply unit for supplying a purge gas to the first purging unit may be connected with another supply unit for supplying a curtain gas to the first curtain unit.

"The vapor deposition apparatus may further include a second curtain unit that is disposed between a second purging unit of the at least one second region and a first injecting unit of the at least one first region. The second purging unit may be disposed closer to the second exhausting unit than the second curtain unit. A gas pressure applied to the second purging unit may be greater than a gas pressure applied to the second curtain unit. A width of the second purging unit may be less than a width of the second curtain unit. A height of the second purging unit may be less than a height of the second curtain unit.

"A supply unit for supplying a purge gas to the second purging unit may be connected with another supply unit for supplying a curtain gas to the second curtain unit. A vapor deposition procedure may be performed while the substrate and the vapor deposition apparatus relatively move with respect to each other. The second raw material in a radical form may be injected into the substrate.

"A second injecting unit of the at least one second region may include a plasma generator; a corresponding surface corresponding to the plasma generator; a plasma generation space formed between the plasma generator and the corresponding surface; a plurality of slits arrayed in one direction and formed to pass the second raw material in a radical form, wherein the second raw material is formed in the plasma generation space; and an injection region via which the second raw material that passed through the plurality of slits are injected into the substrate.

"The plurality of slits may further have slits that are formed in another direction crossing the one direction. Slits in a center from among the plurality of slits may be smaller than slits in a side from among the plurality of slits.

"The vapor deposition apparatus may include a plurality of second regions, and slits arranged in one of the plurality of second regions may deviate from slits arranged in another one of the plurality of second regions. Side surfaces of each of the plurality of slits may be curved.

"The plasma generator may rotate in one direction. The vapor deposition apparatus may include a plurality of second regions, and a plasma generator arranged in one of the plurality of second regions, and a plasma generator arranged in another one of the plurality of second regions may rotate in different directions.

"The vapor deposition apparatus may include a plurality of first regions and a plurality of second regions, and the plurality of first regions and the plurality of second regions may be alternately disposed, respectively.

"Embodiments may also be realized by providing a method of manufacturing an organic light-emitting display apparatus, the method includes an operation of forming a thin film on a substrate by using a vapor deposition apparatus, wherein the thin film at least includes a first electrode, an intermediate layer comprising an organic emission layer (organic EML), a second electrode, and an encapsulation layer, and the vapor deposition apparatus includes at least one first region comprising a first injecting unit for injecting a first raw material, a first purging unit for injecting a purge gas, and a first exhausting unit for performing a pumping operation and disposed between the first injecting unit and the first purging unit; at least one second region comprising a second injecting unit for injecting a second raw material, a second purging unit for injecting a purge gas, and a second exhausting unit for performing a pumping operation and disposed between the second injecting unit and the second purging unit; a first blocking unit A formed between the first exhausting unit and the first injecting unit and between the first exhausting unit and the first purging unit in the at least one first region so as not to allow the first exhausting unit and the first injecting unit to have a common region therebetween and not to allow the first exhausting unit and the first purging unit to have a common region therebetween; and a first blocking unit B formed between the second exhausting unit and the second injecting unit and between the second exhausting unit and the second purging unit in the at least one second region so as not to allow the second exhausting unit and the second injecting unit to have a common region therebetween and not to allow the second exhausting unit and the second purging unit to have a common region therebetween, and the operation of forming the thin film may be performed while the substrate and the vapor deposition apparatus relatively move with respect to each other.

"The operation of forming the thin film may include an operation of forming the encapsulation layer disposed on the second electrode. The operation of forming the thin film may include an operation of forming an insulating layer. The operation of forming the thin film may include an operation of forming a conductive layer.

BRIEF DESCRIPTION OF THE DRAWINGS

"Features will become more apparent to those of ordinary skill in the art by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:

"FIG. 1 is a cross-sectional view of a vapor deposition apparatus according to an exemplary embodiment;

"FIG. 2 is a magnified view of first regions 110A in FIG. 1;

"FIG. 3 is a magnified view of a portion S in FIG. 1;

"FIG. 4A is a cross-sectional view of slits, taken along line IV-IV of FIG. 3;

"FIGS. 4B through 4D illustrate other examples of the slits of FIG. 1;

"FIG. 5 is a cross-sectional view of a vapor deposition apparatus according to an exemplary embodiment;

"FIG. 6 is a magnified view of a portion P in FIG. 5;

"FIG. 7 is a cross-sectional view of a vapor deposition apparatus according to an exemplary embodiment;

"FIG. 8 is a cross-sectional view of a vapor deposition apparatus according to an exemplary embodiment;

"FIG. 9 is a cross-sectional view of an organic light-emitting display apparatus manufactured by an organic light-emitting display apparatus manufacturing method, according to an exemplary embodiment; and

"FIG. 10 is a magnified view of a portion F in FIG. 9."

For more information, see this patent application: KIM, Jae-Hyun; KIM, Jin-Kwang; HUH, Myung-Soo. Vapor Deposition Apparatus and Method of Manufacturing Organic Light-Emitting Display Apparatus. Filed December 7, 2012 and posted February 6, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=6574&p=132&f=G&l=50&d=PG01&S1=20140130.PD.&OS=PD/20140130&RS=PD/20140130

Keywords for this news article include: Patents.

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Source: Politics & Government Week


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