No assignee for this patent application has been made.
Reporters obtained the following quote from the background information supplied by the inventors: "Semiconductor components are often provided with protection against transient disturbances to avoid damage to the semiconductor components that may result from high voltage pulses and/or high current pulses, which pulses may arise from an electrostatic charge. An example of such transient disturbances is ESD pulses. Various one- or two-stage systems are known for protecting against ESD pulses. Two-stage systems usually have a first stage that can accommodate high currents but that has a high voltage drop. In order to protect sensitive components, a second stage is therefore provided which is closer to the component that is to be protected; this second stage can accommodate substantially lower currents than the first stage, but has a lower voltage drop."
In addition to obtaining background information on this patent application, VerticalNews editors also obtained the inventors' summary information for this patent application: "According to an embodiment, a device includes a two-stage protection device for protecting an electronic component against transient disturbances. Transient disturbances may be electrical current or voltage pulses. Examples of transient disturbances are: electrostatic discharge (ESD) pulses; disturbances related to a switching action (on and/or off); etc. The electronic component may be a semiconductor component, and may contain one or more transistors and/or an integrated circuit. The protection device is connected to at least a first contact and one second contact of the electronic component and is disposed essentially in parallel to the component that is to be protected, between the first contact and the second contact. The protection device includes at least one first stage with at least one diode and a second stage which is separated from the first stage by at least one resistor. The second stage includes at least one diode arrangement having at least two back-to-back disposed diodes which are disposed cathode-to-cathode.
"The at least two in series disposed diodes in the second stage may be polysilicon diodes, disposed in a p-n-p configuration. In this way, a protection device may be economically implemented directly on the semiconductor substrate of the semiconductor component, which, for example, has low drift sensitivity. A p+/n-/p+ doping may be advantageous.
"According to another embodiment, a device for protection of electronic components against transient disturbances is provided. The protection device is electrically connected in parallel with at least a first contact and a second contact of the electronic component, and includes a diode arrangement with at least two back-to-back disposed polysilicon diodes. The electronic component may be a semiconductor component, and the at least two back-to-back disposed diodes may be implemented in a silicon substrate of the semiconductor component, wherein the diodes are disposed in a p-n-p configuration. In the p-n-p configuration, the back-to-back disposed polysilicon diodes are disposed anode-to-anode.
"Those skilled in the art will recognize additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
"The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts. The features of the various illustrated embodiments can be combined unless they exclude each other. Embodiments are depicted in the drawings and are detailed in the description which follows.
"FIG. 1 illustrates a first embodiment of an ESD protection device.
"FIG. 2 illustrates an embodiment of a p/n/p diode.
"FIGS. 3A and 3B illustrate a second embodiment of an ESD protection device.
"FIG. 4 illustrates a third embodiment of an ESD protection device.
"FIG. 5 illustrates another embodiment of an ESD protection device."
For more information, see this patent application: Mayerhofer, Michael; Cobzaru, Andrei; Finney, Adrian; Glaser, Ulrich;
Keywords for this news article include: Patents, Electronics, High Voltage, Semiconductor.
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