By Targeted News Service
ALEXANDRIA, Va., Feb. 13 -- Avogy, San Jose, Calif., has been assigned a patent (8,643,134) developed by eight co-inventors for a method "for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface and forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate. " The co-inventors are Madhan Raj, Cupertino, Calif., David P. Bour, Cupertino, Calif., Hui Nie, Cupertino, Calif., Richard J. Brown, Los Gatos, Calif., Isik C. Kizilyalli, San Francisco, Andrew P. Edwards, San Jose, Calif., Thomas R. Prunty, Santa Clara, Calif., and Linda Romano, Sunnyvale, Calif.
The patent application was filed on Nov. 18, 2011 (13/300,028). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8643134.PN.&OS=PN/8643134&RS=PN/8643134
Written by Lesley Gonzales; edited by Vessie Ann Abalos.