By a News Reporter-Staff News Editor at Journal of Technology -- Fresh data on Magnetics are presented in a new report. According to news originating from Taipei, Taiwan, by VerticalNews correspondents, research stated, "Undoped and N-doped ZnO (ZnO:N) thin films were prepared with different N-2 flow rates on Al2O3 substrates by rf magnetron sputtering methods. The structure and high-frequency magneto-electrical properties of the ZnO:N films varied drastically with the variation of N-2 flow rate."
Our news journalists obtained a quote from the research from National Taiwan Normal University, "With the introduction of N-2 gas during deposition, short hexagonal-like nanorods grown at grain surface were observed. In comparison with the undoped ZnO film, Raman spectra of the ZnO:N films revealed four anomalous peaks at 276, 510, 586 and cm(-1), which are attributed to nitrogen-related defect complexes. Complex impedance spectra of all the films were analyzed by an equivalent circuit, employing two sets of parallel resistance and capacitance components in series to represent the oxide grain and grain boundary contributions, respectively."
According to the news editors, the research concluded: "The analyzed results have implied that the N-2 flow rate can effectively alter the defect concentration of the films, and consequently adjust the ac conductivity, magneto-dynamical and dielectric relaxation behaviors of the oxide-based magnetic semiconductor polycrystalline films."
For more information on this research see: Influence of N-2 Gas Flow on the High-Frequency Magneto-Electrical Properties of ZnO Thin Films. IEEE Transactions on Magnetics, 2014;50(1):98-101. IEEE Transactions on Magnetics can be contacted at: Ieee-Inst Electrical Electronics Engineers Inc, 445 Hoes Lane, Piscataway, NJ 08855-4141, USA. (Institute of Electrical and Electronics Engineers - www.ieee.org/; IEEE Transactions on Magnetics - ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20)
The news correspondents report that additional information may be obtained from C.C. Wang, National Taiwan Normal University, Dept. of Phys, Taipei 11677, Taiwan. Additional authors for this research include C.M. Fu, Y.M. Hu, C.D. Huang and H.L. Liu.
Keywords for this news article include: Asia, Taipei, Taiwan, Magnetics
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