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Researchers Submit Patent Application, "Manufacturing Method of Pixel Structure", for Approval

February 19, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventors Wei, Chuan-Sheng (Taichung City, TW); Huang, Chau-Shiang (Keelung City, TW); Tsai, Wu-Liu (Hualien County, TW); Lin, Chih-Hung (Taoyuan County, TW); Chen, Maw-Song (Taipei City, TW), filed on September 27, 2013, was made available online on February 6, 2014.

The patent's assignee is Au Optronics Corporation.

News editors obtained the following quote from the background information supplied by the inventors: "The invention relates to a pixel structure and a manufacturing method thereof.

"In general, a pixel structure of a liquid crystal display (LCD) includes a thin film transistor (TFT) and a pixel electrode. The TFT serves as a switching device of an LCD unit. To control each individual pixel structure, a certain pixel is usually selected according to a corresponding scan line and a corresponding data line, and display information corresponding to the certain pixel is displayed through providing an appropriate operating voltage. The pixel structure further includes a storage capacitor, such that the pixel structure can be equipped with a voltage-retaining function. Namely, the storage capacitor can store the applied operating voltage to stabilize the display image of the pixel structure.

"To form the storage capacitor in the pixel structure, a capacitor electrode is often required in the pixel structure. However, in order to increase the capacitance of the storage capacitor, the area occupied by the capacitor electrode need be expanded, thus reducing the aperture ratio of the pixel structure.

"At present, a pixel structure in which the capacitor electrode is disposed below the data line has been proposed to increase the aperture ratio of the pixel structure. However, the capacitor electrode and the data line which are overlapped increase the loading of the pixel structure. Therefore, in the pixel structure, the required power consumption for driving the display panel is increased in the pixel structure."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "The invention is directed to a pixel structure and a manufacturing method thereof, and the pixel structure can have a high aperture ratio without increasing the loading of the pixel structure.

"In the invention, a pixel structure that includes a first electrode, a first insulation layer, a gate, a second electrode, a second insulation layer, a semiconductor layer, a source and a drain, a third electrode, a third insulation layer, and a pixel electrode is provided. The first electrode is located on a substrate. The first insulation layer covers the first electrode. The gate is located on the first insulation layer. The second electrode is located on the first insulation layer above the first electrode. The second insulation layer covers the gate and the second electrode. The semiconductor layer is located on the second insulation layer above the gate. The source and the drain are located on the semiconductor layer. Here, the gate, the semiconductor layer, the source, and the drain together constitute a TFT. The third electrode is located on the second insulation layer above the second electrode and the third electrode is electrically connected to the first electrode. Here, the first electrode, the second electrode, and the third electrode together constitute a capacitor. The third insulation layer covers the source, the drain, and the third electrode. The pixel electrode is located on the third insulation layer and electrically connected to the drain.

"In the invention, a manufacturing method of a pixel structure is also provided. In the manufacturing method, a first conductive layer is formed on a substrate, and the first conductive layer includes a first electrode. A first insulation layer is formed on the first conductive layer. A second conductive layer is formed on the first insulation layer. The second conductive layer includes a gate and a second electrode, and the second electrode is located above the first electrode. A second insulation layer is formed on the second conductive layer. A semiconductor layer is formed on the second insulation layer above the gate. A third conductive layer is formed on the second insulation layer. The third conductive layer includes a source, a drain, and a third electrode. The source and the drain are located on the semiconductor layer, and the third electrode is located above the second electrode and electrically connected to the first electrode. Here, the gate, the semiconductor layer, the source, and the drain together constitute a TFT, and the first electrode, the second electrode, and the third electrode together constitute a capacitor. A third insulation layer is formed on the third conductive layer. A pixel electrode is formed on the third insulation layer, and the pixel electrode is electrically connected to the drain.

"Based on the above, the capacitor described herein is constituted by the first electrode, the second electrode, and the third electrode, and the first electrode is located below the first insulation layer that is below the second electrode. Hence, in the invention, the storage capacitance of the capacitor can be increased without negatively affecting the aperture ratio of the pixel structure; what is more, a display with high resolution can be formed. From another aspect, since the first, second, and third electrodes of the capacitor are not configured below the data line, the capacitor described herein does not lead to an increase in the loading of the pixel structure.

"In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanying figures are described in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

"The accompanying drawings are included to provide further understanding, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments and, together with the description, serve to explain the principles of the invention.

"FIG. 1A through 1I are schematic cross-sectional views illustrating a process of fabricating a pixel structure according to an embodiment of the invention.

"FIG. 2 is a schematic top view illustrating a pixel structure according to an embodiment of the invention. Here, FIG. 2 is taken along section lines I-I' and II-II' corresponding to the cross-sectional views in FIG. 1A to FIG. 1I.

"FIG. 3 is a schematic top view illustrating a pixel structure according to an embodiment of the invention.

"FIG. 4 is a schematic cross-sectional view illustrating the pixel structure taken along section lines I-I' and II-II' depicted in FIG. 3.

"FIG. 5 is a schematic top view illustrating a pixel structure according to an embodiment of the invention.

"FIG. 6 is a schematic cross-sectional view illustrating the pixel structure taken along section lines I-I' and II-II' depicted in FIG. 5.

"FIG. 7 is a schematic cross-sectional view illustrating a pixel structure according to another embodiment of the invention.

"FIG. 8 is a schematic top view illustrating a pixel structure according to an embodiment of the invention."

For additional information on this patent application, see: Wei, Chuan-Sheng; Huang, Chau-Shiang; Tsai, Wu-Liu; Lin, Chih-Hung; Chen, Maw-Song. Manufacturing Method of Pixel Structure. Filed September 27, 2013 and posted February 6, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=2557&p=52&f=G&l=50&d=PG01&S1=20140130.PD.&OS=PD/20140130&RS=PD/20140130

Keywords for this news article include: Electronics, Semiconductor, Au Optronics Corporation.

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Source: Electronics Newsweekly


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