The assignee for this patent, patent number 8644074, is
Reporters obtained the following quote from the background information supplied by the inventors: "The present inventive concept herein relates to semiconductor memory device, and more particularly, to a method of programming a nonvolatile memory device.
"Semiconductor memory devices are made of a semiconductor material such as silicon (Si), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP). Semiconductor memory devices are classified into volatile memory devices and nonvolatile memory devices.
"Volatile memory devices lose their stored data when power supplied is interrupted. The various types of volatile memory include a static random access memory (SRAM), a dynamic RAM (DRAM), a synchronous DRAM (SDRAM). Nonvolatile memory devices maintain their stored data even when power supply is interrupted.
"The various types of nonvolatile memory devices include a read only memory (ROM), a programmable
In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventors' summary information for this patent: "An aspect of the inventive concept provide a nonvolatile memory device comprising: a memory cell array including a NAND string; first and second word lines connected to the NAND string; a third word line connected to the NAND string, the third word line being disposed between the first and second word lines; a temperature sensor configured to measure the temperature of the nonvolatile memory device; and a voltage generator configured to generate first and second pass voltages and a program voltage. While a program operation is performed, the program voltage is applied to the third word line, the first pass voltage is applied to the first word line, the second pass voltage is applied to the second word line and the voltage level of at least one of the first and second pass voltages is controlled according to the measured temperature.
"An aspect of the inventive concept also provides a memory system including a nonvolatile memory device comprising: a memory cell array and first through third word lines and generating first and second pass voltages and a program voltage in response to a control signal; and a memory controller measuring the temperature of the memory system (thus measuring the temperature of the semiconductor including the channel of a NAND string to be programmed) and transferring a control signal and a temperature signal based on the measured temperature to the nonvolatile memory device. While a program operation is performed, the program voltage is applied to the third word line, first pass voltage is applied to the first word line and the second pass voltage is applied to the second word line, and wherein the nonvolatile memory device is configured to control the level of at least one of the first and second pass voltages based on the measured temperature.
"An aspect of the inventive concept also provides a program method of a nonvolatile memory device including first and second word lines connected to a NAND string and a third word line connected to the NAND string and disposed between the first and second word lines. The method includes measuring the temperature of the nonvolatile memory device; generating first and second pass voltages and a program voltage wherein the level of at least one of the first and second pass voltages is controlled according to the measured temperature; and applying the program voltage to the third word line, applying the first pass voltage to the first word line and applying the second pass voltage to the second word line.
"Preferred embodiments of the inventive concept will be described below in more detail with reference to the accompanying drawings. The inventive concept may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. Like numbers refer to like elements throughout."
For more information, see this patent: Chang, Sung-Il; Kang, Changseok; Park, Chan; Choe, Byeong-In. Nonvolatile Memory Device, Programming Method Thereof and Memory System Including the Same. U.S. Patent Number 8644074, filed
Keywords for this news article include: Semiconductor,
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