The patent's inventors are Dipietro,
This patent was filed on
From the background information supplied by the inventors, news correspondents obtained the following quote: "Semiconductor devices such as microprocessors, microcontrollers and communication chips are used extensively in electronic devices including computers. Generally semiconductor devices include a plurality of integrated circuits (ICs). ICs can contain millions of transistors and other circuit elements fabricated on a single semiconductor chip. Semiconductor devices require many layers of wiring to interconnect devices such as field effect and bipolar transistors into integrated circuits. Two major factors limit the signal speed of advanced semiconductor devices. The first is the wiring density which is generally a function of wire dimensions. The second is the capacitance of the device which is a function of the dielectric constant of the material insulating the wires. Therefore, to increase signal speed for semiconductor devices, there is an ongoing need for compositions and processes for fabricating semiconductor devices that have dense wiring and have low capacitance."
Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "The present invention relates to compositions and methods for imprint lithography. A first aspect of the present invention relates to a composition for use in manufacturing semiconductor devices. The composition comprises a poly-oxycarbosilane polymer, a silanol and a reaction initiator to promote crosslinking between the poly-oxycarbosilane and the silanol. In a preferred embodiment, the reaction initiator is selected from a photoacid generator and a thermal acid generator. Optionally, the composition can also comprise a pore generator.
"A second aspect of the present invention relates to a method for forming a semiconductor structure. The method generally comprises (a) disposing on a substrate a precursor dielectric layer comprising a polymerizable composition comprising a silanol, a reaction initiator and a poly-oxycarbosilane; (b) pressing a relief pattern on a surface of a template into the exposed surface of the precursor dielectric layer; © polymerizing the precursor dielectric layer; (d) curing the precursor dielectric layer to form a dielectric layer having thick and thin regions corresponding to the relief pattern; and lastly (e) depositing a conductive material onto the exposed surface of the dielectric layer after the template has been removed. Suitably, the precursor dielectric layer is a liquid. The dielectric material can be cured after polymerizing the precursor dielectric layer and before or after removing the template."
For the URL and additional information on this patent, see: Dipietro,
Keywords for this news article include: Electronics, Semiconductor,
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