Patent number 8617350 is assigned to
The following quote was obtained by the news editors from the background information supplied by the inventors: "Plasma is used in a number of industrial manufacturing applications, such as semiconductors, displays, solar technologies, and lighting. The plasma is applied to a substrate, which is processed one or more ways, including but not limited to plasma enhanced chemical vapor deposition, plasma etching, plasma surface treatment, and ion implantation. The substrate may vary in length, thickness, and width. The substrate may also be treated with an activated precursor, which prepares the substrate for a particular application of plasma. A number of the applications of plasma processing use a static mode, where the substrate sits stationary in the processing chamber while the plasma is applied."
In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventor's summary information for this patent: "In general, in one aspect, the invention relates to a linear plasma system. The linear plasma system includes a number of troughs of an electrode alternating with a number of peaks of the electrode, a reactive gas feed, a precursor gas feed, and a power source. The troughs and peaks of the electrode form a sawtooth shape. Each trough has an array of holes located at a trough apex, and each peak has an array of holes located at a peak apex. The reactive gas feed is disposed on the electrode and configured to continuously release a reactive gas into each array of holes located at the trough apex. The precursor gas feed is disposed on the electrode and configured to continuously release, while the reactive gas feed releases the reactive gas, a precursor gas into the array of holes located at the peak apex. The power source is configured to apply radio frequency power to the electrode to simultaneously interact with the reactive gas mixed with a first portion of the precursor gas to generate plasma. The resulting product is deposited on the substrate as the substrate passes underneath the electrode.
"In general, in one aspect, the invention relates to a method for processing a substrate using a linear plasma system. The method steps include (1) injecting a reactive gas into a first array of holes on a plurality of troughs, wherein the first array of holes is disposed on an electrode having a sawtooth shape, (2) injecting, while injecting the reactive gas, a precursor gas into a second array of holes on a plurality of peaks, wherein the second array of holes is disposed on the electrode, (3) channeling the reactive gas through the first array of holes into a gap between a front surface of the electrode and the substrate, (4) channeling the precursor gas through the second array of holes into the gap, (5) applying radio frequency power to the electrode, where the radio frequency power interacts with a first portion of the reactive gas mixed with a first portion of the precursor gas to generate plasma in the gap, where the plasma interacts with a second portion of the precursor gas and a second portion of the reactive gas to form a product of an activated precursor and reactive gas, and (6) depositing the product of the activated precursor and the reactive gas onto a top side of the substrate as the substrate passes underneath the first electrode.
"Other aspects of the invention will be apparent from the following description and the appended claims."
URL and more information on this patent, see: Shang, Quanyuan T.. Linear
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